Analog Devices International Unlimited Company

Analog Devices,inc.

Analog Devices Global

Analog Devices Global Unlimited Company

Alan J O'Donnell

Eoin Edward English

David J Clarke

David Aherne

Shaun Bradley

Edward John Coyne

Patrick Martin McGuinness

Padraig Fitzgerald

David M Boland

Javier Calpe Maravilla

Colin Gerard Lyden

Santiago Iriarte

Mark Murphy

Gary Casey

Michael P Lynch

Colm Patrick Heffernan

Mark Forde

Kevin B Manning

Michael A Looby

Stephen Denis Heffernan

Jan Kubik

Thomas G O'Dwyer

Alfonso Berduque

Robert Guyol

Maria Jose Martinez

Javier Alejandro Salcedo

Jochen Schmitt

Gavin Patrick Cosgrave

John Anthony Cleary

Albert C O'Grady

Stanislav Jolondcovschi

Jan Kubík

Nijun Wei

Rigan McGeehan

Xin Zhang

Michael C W Coln

Jianglong Zhang

Ying Zhao

Mark Schirmer

Bruce A Hecht

Michael James Twohig

Garrett A Griffin

James Thomas Sheeran

Olly J Kierse

Michael J Cusack

Paul W Stevens

Thomas M Goida

Oliver J Kierse

Helen Berney

Krystian Balicki

Cillian Burke

Mark J Murphy

Patrick Mcguinness

Aspects of this disclosure relate to adjusting fluid flow using magnetically sensitive particles. Fluid can flow through an opening in a container. Magnetically sensitive particles can be confined within the container. A magnetic field can be applied to move the magnetically sensitive particles in the container to adjust flow of the fluid through the opening.

Flow adjustment based on particle movement in response to magnetic field

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Wearable device with energy harvesting

Aspects of this disclosure relate to particles that can move in response to a magnetic field. A system can include a container, particles within the container, and a magnetic structure integrated with the container. The magnetic structure can magnetically interact with both an external magnetic field and the particles. Related methods are disclosed including magnetic field detection methods based on detection of particles within a container.

Magnetically sensitive particles and magnetic structure

Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Magnetic field measurement using container with particle

The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Lifetime indicator system

Sensing devices are described. A sensing device includes an inertial sensor, a read-out circuit configured to determine first data indicative of an acceleration of the structure using an output of the inertial sensor, an energy harvester configured to capture energy, and a power management unit. The power management unit comprises a plurality of energy storage components coupled to the energy harvester and a plurality of switches coupled to respective energy storage components of the plurality of energy storage components. The power management unit monitors energy levels stored in the energy storage components, selectively charges the plurality of energy storage components by selectively activating the plurality of switches, and provides power to one or more of the inertial sensor and the read-out circuit based on the monitored energy levels.

3-axis angular accelerometer

An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Integrated ion sensing apparatus and methods

Spark gap structures for detection and protection against electrical overstress events

Exposure monitor device

Magnetic field sensing based on particle position within container

A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

Devices, systems and methods including magnetic structures and micromechanical structure

Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Charge storage with electrical overstress protection

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

Electrical overstress detection device

Growing community of inventors

Castletroy, Ireland

Alan J O'Donnell