Semitest, Inc.

3m Innovative Properties Company

Alan H Field

Peter L Domenicali

Sergey Liberman

Glendon P Marston

Charles M Kohn

Bernard O Geaghan

Gordon F Taylor

Martin Rommel

Systems and methods provide for simulating an effective touch on a touch screen sensor. A touch screen sensor includes a first surface, an opposing second surface, and one or more electrodes disposed on or proximate to the second surface. Signals are applied to the first and second surfaces in a manner which results in a simulated touch to a particular location of the touch screen sensor. In another approach, a plurality of voltage drive signals are applied at various touch surface regions of the touch screen sensor. A current flow resulting from application of the voltage drive signals is detected as the simulated touch. Touch simulation can be initiated locally or remotely as part of automated monitoring, testing, calibration, and/or servicing procedures. Results of a touch simulation procedure can be acquired and used locally or remotely to assess the operational fitness of the touch screen sensor over time.

Touch simulation system and method

Semiconductor material characterizing method and apparatus

A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode by a nonconductive medium. In one implementation of the invention the nonconductive medium is air. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable DC bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen. A signal is also provided corresponding to the total capacitance between the two electrodes during the DC bias voltage sweep. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam. The doping concentration profile is then determined using the ac photocurrent, the total capacitance and the DC bias voltage. The apparatus includes a sensor assembly having a sensor tip which is mounted on an air bearing assembly. The air bearing assembly is suspended from a housing by a pair of bellows. In use, air is supplied to the air bearing assembly through the bellows causing the bellows to expand, lowering the sensor tip until the air bearing action stops the expansion. In another implementation of the invention, a light beam is not employed and the doping concentration profile is determined using the total capacitance, the capacitance of air, the DC bias voltage and the area of the electrode spaced from the specimen information.

Method and apparatus for characterizing a specimen of semiconductor

A method for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced from the other electrode by an air gap. A signal is provided corresponding to the total capacitance between the two electrodes. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam. The doping concentration profile is then determined using the ac photocurrent, the total capacitance and the DC bias voltage.

Method utilizing a modulated light beam for determining characteristics

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Topsfield, MA, United States of America

Alan H Field