Iqe Plc

Alan Gott

Andrew C Clark

Richard Hammond

Rodney Pelzel

Drew Nelson

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

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Bristol, United Kingdom

Alan Gott