Axcelis Technologies, Inc.

Lam Research Corporation

Macdermid, Incorporated

Alan Frederick Becknell

Thomas James Buckley

David Ferris

Palanikumaran Sakthivel

Carlo Waldfried

Aseem Kumar Srivastava

Cynthia Louise Ebner

Palani Sakthivel

John Scott Hallock

Richard E Pingree, Jr

Philip Hammar

Daniel Joseph Hart

Aseem Srivastava

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

Apparatus and plasma ashing process for increasing photoresist removal rate

Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called 'effect detection' process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1 part per billion.

Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process

A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.

Process for removal of photoresist after post ion implantation

Disclosed are waterborne, stable photoresist compositions and methods of their preparation and use. The compositions are characterized by increased shear and storage stability. The photoresist composition comprises an aqueous emulsion of a 22% or less neutralized carboxylated resin and non-ionic surfactant containing poly(ethylene-oxide) segments, photopolymerizable monomer and photoinitiator. Neutralization is accomplished using either an organic or an inorganic base or mixtures thereof. The photoresist compositions are useful to selectively coat and protect surfaces subjected to corrosive environments, e.g., etchant processes, in the production of circuit traces for electronic circuit boards.

Stable, ionomeric photoresist emulsion and process of preparation and

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Ellicott City, MD, United States of America

Alan Frederick Becknell