Nokia Technologies Oy

Nokia Corporation

Emberion Oy

Alan Colli

Richard White

Samiul Md Haque

Stefano Marco Borini

Mikko Aleksi Uusitalo

Pirjo Pasanen

Andrea Carlo Ferrari

Alexander Bessonov

Reijo Kalervo Lehtiniemi

Tim J Echtermeyer

Piers Andrew

Zoran Radivojevic

Michael Robert Astley

Elefterios Lidorikis

Di Wei

Mark Allen

Leo Karkkainen

Jani Kivioja

Asta Maria Karkkainen

Leo Mikko Johannes Kärkkäinen

Pritesh Hiralal

Salvatore Zarra

Asta Maria Kärkkäinen

Antonio Lombardo

Shakil A Awan

Anna Eiden

Tero S Kulmala

Andrea Ferrari

Asta Maria Karkkaainen

Leo Mikko Karkkainen

Reijo Kalvero Lehtiniemi

Pirjo Marjaana Pasanen

Shakil Awan

Tero Kulmala

Tim Echtermeyer

A photodetector array comprising at least one first sensor and at least one second sensor on the horizontal surface of the array substrate. The at least one first sensor is sensitive to radiation in a first wavelength range which comprises long-wavelength infrared wavelengths, and the at least one second sensor is sensitive to radiation in a second wavelength range which comprises wavelengths shorter than long-wavelength infrared. The array substrate comprises a vertical cavity on its horizontal surface, and the first sensor comprises a layer of pyroelectric material () which extends horizontally across the vertical cavity in the first area. A first part of a layer of two-dimensional layered material at least partly covers the layer of pyroelectric material (), and a second part of the layer of two-dimensional layered material at least partly covers the foundation of the second sensor.

Multispectral photodetector array

A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

Photosensitive device with electric shutter

An apparatus configured to alternate the application of first and second gate voltages to a gate electrode of a photodetector. A first change in electrical current is relative to a predetermined measurement of electrical current taken at the first gate voltage in the absence of incident electromagnetic radiation, and a second change in electrical current is relative to a predetermined measurement of electrical current taken at the second gate voltage in the absence of the incident electromagnetic radiation. The photodetector comprises a channel, and source and drain electrodes configured to enable flow of electrical current through the channel. Quantum dots are configured to generate charge carriers on exposure to the incident electromagnetic radiation. The gate electrode is configured to generate an electric field upon the application of a gate voltage thereto, and process the signal to at least partially remove any changes in electrical current which are attributed to noise.

Apparatus and associated methods for reducing noise in photodetectors

A multilayer graphene composite comprising a plurality of stacked graphene layers separated from one another by an ion gel, wherein the ion gel is intercalated between adjacent graphene layers such that ions within the ion gel are able to arrange themselves at the surfaces of the graphene layers to cause a detectable change in one or more of an electrical and optical property of the graphene layers when a gate voltage is applied to a gate electrode in proximity to the ion gel.

Apparatus with graphene layers intercalated with ion gel

An apparatus and method, the apparatus comprising: at least one charged substrate (); a channel of two dimensional material (); and at least one floating electrode (A-C) wherein the floating electrode comprises a first area (A-C) adjacent the at least one charged substrate, a second area (A-C) adjacent the channel of two dimensional material and a conductive interconnection (A-C) between the first area and the second area wherein the first area is larger than the second area and wherein the at least one floating electrode is arranged to control the level of doping within the channel of two dimensional material.

Apparatus and method for controlling doping

An apparatus and method, the apparatus including a sensor array including a plurality of first sensors configured to detect a first attribute; at least one second sensor configured to detect a second attribute; wherein the at least one second sensor is configured such that, in response to detecting a trigger input including the second attribute the second sensor enables a first portion of the sensor array to be powered on while a second portion of the sensor array remains powered off.

Apparatus and method for sensing

An apparatus comprising: pyroelectric material; an electric field sensor; a first conductive electrode comprising a first area adjacent the pyroelectric material; a second conductive electrode comprising a second area adjacent the electric field sensor; and a conductive interconnection between the first conductive electrode and the second conductive electrode, wherein the first area of the first conductive electrode is larger than the second area of the second conductive electrode.

Sensing apparatus

In accordance with an example embodiment of the present invention, a device comprising one or more porous graphene layers, the or each graphene porous layer comprising a multiplicity of pores. The device may form at least part of a flexible and/or stretchable, and or transparent electronic device.

Graphene device and method of fabricating a graphene device

An apparatus and method wherein the apparatus comprises: a sensing material configured to produce a non-random distribution of free charges in response to a parameter; an electric field sensor; a first conductive electrode comprising a first area overlapping the sensing material; an insulator provided between the first conductive electrode and the sensing material; a second electrode comprising a second area adjacent the electric field sensor; and a conductive interconnection between the first conductive electrode and the second conductive electrode.

An apparatus comprising: &#x2014;a piezoelectric convertor layer; and &#x2014;a proximal first piezoresistive layer being in electrical communication with, a first face of the piezoelectric convertor layer, the apparatus being configured such that when the piezoelectric convertor layer is deformed to generate charge, the proximal piezoresistive layer is configured to control the flow of charge from the piezoelectric convertor layer.

Apparatus and associated methods

An apparatus comprising: a sensor () configured to sense electromagnetic radiation () wherein the sensor () comprises a sensing portion () comprising a pyroelectric material () configured to be responsive to incident electromagnetic radiation () and a transducing portion () configured to convert the response of the pyroelectric material () into an output signal; and at least one antenna () configured to direct the electromagnetic radiation () onto the sensor ().

Apparatus for sensing

An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.

Graphene-based MIM diode and associated methods

An apparatus including a piezoelectric convertor layer; at least one piezoresistive layer on the piezoelectric convertor layer; and electrical conductor outputs. The at least one piezoresistive layer includes a plurality of spaced apart piezoresistive electrodes. The apparatus is configured such that when the piezoelectric convertor layer is deformed to generate a charge, at least one of the piezoresistive electrodes is stressed, where the at least one piezoresistive layer is configured to control flow of charge from the piezoelectric convertor layer. The electrical conductor outputs are electrically connected to the piezoresistive electrodes. The outputs are configured to allow the charge from the piezoelectric convertor layer to flow out of the piezoresistive electrodes. The electrical conductor outputs are configured relative to the piezoresistive electrodes to allow identification of the at least one piezoresistive electrode which has been stressed based upon the charge on at least one of the electrical conductor outputs.

Piezoelectric generating with location signaling

An apparatus including a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, including at least one graphene electrode configured to transduce a propagating surface acoustic wave to an electrical signal.

Apparatus for transducing a surface acoustic wave

An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.

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Cambridge, United Kingdom

Alan Colli