Axcelis Technologies, Inc.

Alan C Janos

Ivan Berry

Robert Douglas Mohondro

Daniel B Richardson

Michael B Colson

Andre G Cardoso

Kevin Stewart

Anthony Sinnot

Michael G Ury

Ivan L Berry, Iii

Carlo Waldfried

Orlando Escorcia

Palani Sakthivel

David Ferris

Christopher Garmer

Malcolm Pack

Mohammad Kamarchi

Betty Zhang

Montien Saubhayana

An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction

Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

Apparatus and process for treating dielectric materials

An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.

Electrodeless lamp for emitting ultraviolet and/or vacuum ultraviolet radiation

An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer adapted for collecting light; a waveguide having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe in optical communication with the other end of the waveguide; and a filter intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Apparatus and process for measuring light intensities

An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

Plasma process and apparatus

A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Process for optically erasing charge buildup during fabrication of an integrated circuit

A dielectric barrier discharge apparatus for treating a substrate includes a first planar electrode; a dielectric layer disposed on a surface of the first planar electrode; a porous planar electrode spaced above and in a parallel plane with the dielectric layer, wherein the porous planar electrode has a geometric transmission factor greater than 70 percent; and a power supply in electrical communication with the first electrode and the second electrode. A process for treating a substrate includes exposing the substrate surface to reactants produced by the dielectric barrier discharge apparatus.

Dielectric barrier discharge apparatus and process for treating a substrate

A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation. The range of wavelengths transmitted to the wafer treatment region can be &ldquo;tuned&rdquo; by using a filter disposed adjacent to the protective window which functions to block transmission of selected wavelengths of emitted radiation.

Tunable radiation source providing a VUV wavelength planar illumination pattern for processing semiconductor wafers

A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.

Shallow angle interference process and apparatus for determining real-time etching rate

The present invention is directed to optimization of the optical detection system for the use of optical emission spectroscopy in end-point detection. The optimization specifically addresses the needs of a radiant heated wafer system in a downstream process chamber environment. The present invention maximizes signal light from relevant reactions, maximizes signal-to noise and signal-to-background ratios, utilizes very small diagnostics access, collects light from the region of most intense light emission from endpoint processes, collects light from representative parts of an entire wafer with just one diagnostic access port to ensure complete end-point, and eliminates light signals from sources other than the wafer.

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Darnstown, MD, United States of America

Alan C Janos