Globalfoundries U.S. Inc.

Alamgir M Arif

Sunil Kumar Singh

Roderick Alan Augur

Dewei Xu

Seung-Yeop Kook

Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.

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Saratoga Springs, NY, United States of America

Alamgir M Arif