S'tile

Centre National De La Recherche Scientifique

UniversitÉ De Poitiers

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S'tile Pole Des Eco-industries

Straboni, Alain

Alain Straboni

Emmanuel Turlot

Jean-Paul Garandet

Etienne Pihan

Virginie Brize

Florent Dupont

Johan Summhammer

Guocai Sun

Alioune Sow

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

Photovoltaic module including integrated photovoltaic cells

A photovoltaic module and its manufacturing method. The module includes a sintered silicon support including several integrated photovoltaic cells.

The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 &#x3bc;m, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 &#x3bc;m; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410&#xb0; C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

Method for preparing a coarse-grain crystallized silicon layer

The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.

Complete recrystallization of semiconductor wafers

An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

Semiconductor structure

A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.

Method for forming a sintered semiconductor material

The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.

Sintered semiconductor material

The invention relates to a method for the production of semiconductor granules comprising a step in which semiconductor powders are sintered and/or melted. The powders are nanometric and/or micrometric sized.

Growing community of inventors

Buxerolles, France

Alain Straboni