Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Alain Soubie

Olivier Rayssac

Thierry Barge

Chrystelle Lagahe-Blanchard

Muriel Martinez

Cécile Berne

Hubert Moriceau

Michel Bruel

Christophe Maleville

Jean Brun

Laurent Vandroux

Corinne Maunand Tussot

Jean-Frederic Clerc

Philippe Spinelli

Jean-Frédéric Clerc

Alain-Marcel Rey

Catherine Durand

An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure.

Object provided with a graphic element transferred on a support and method for making such an object

A method for using of a fabric comprising a material chosen from metals, metallic alloys, polymers, inorganic compounds and mixtures thereof, which material is capable of detecting the presence of a chemical substance, for the detection of said chemical substance.

Use of a fabric comprising a specific material for detecting the presence of a chemical substance

A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NHOH/HOat treatment parameters sufficient to etch about 10 &#x212b; to about 120 &#x212b; from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50&#xb0; C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

Methods for preparing a bonding surface of a semiconductor wafer

An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

Substrate layer cutting device and method

An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target. The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.

Process and apparatus for implanting particles in a solid

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Saint Egreve, France

Alain Soubie