Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Joseph Fourier

Institucio Catalana De Recerca I Estudis Avancats (icrea)

Institut Catala De Nanotechnologia (icn)

Institut Catala De Nanotechnologia

Université Grenoble Alpes

Institucio Catalana De Recerca I Estudis Avancats

Fundació Institució Catalana De Recerca I Estudis Avançats

Institut Català De Nanotecnologia (icn)

Alain Schuhl

Gilles Louis Gaudin

Ioan Mihai Miron

Pietro Gambardella

Pierre-Jean Zermatten

Philippe Sabon

François Montaigne

Gilles Gaudin

Integrated magnetometer comprising a plurality of multilayer magnetoresistive sensors deposited on a surface, called the top surface, of a substantially planar substrate, characterized in that said top surface of the substrate has at least one cavity or protuberance provided with a plurality of inclined faces, and in that at least four said magnetoresistive sensors are placed on four said magnetoresistive sensors are placed on four said inclined faces, having different orientations and opposite one another in pairs, each sensor being sensitive to one component of an external magnetic field parallel to that face on which it is placed. Process for manufacturing such a magnetometer.

Integrated magnetometer and its manufacturing process

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the current flow direction, and wherein the magnetization direction and the magnetic field direction are mutually perpendicular.

Writable magnetic memory element

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle &#x3b1; lying in the range 90&#xb0;&#xb1;60&#xb0;, in particular 90&#xb0;&#xb1;30&#xb0;, and more particularly 90&#xb0;&#xb1;15&#xb0; relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in a first magnetization direction or in a second magnetization direction opposite to the first.

Writable magnetic element

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.

A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.

Magnetic recording device, especially for a hard disk and its manufacturing process

Growing community of inventors

Grenoble, France

Alain Schuhl