Societe Anonyme De Telecommunications

Sat (societe Anonyme De Telecommunications)

Alain R Durand

Michel Royer

Gerard Didier

Jean-Luc Dessus

Robert Triboulet

A method is disclosed for preparing a crystalline ingot of Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te. Before moving a heated solvent zone for progressively dissolving ingot sources and giving rise to a single ingot, an adaptation zone is created from a monocrystalline germ by heating and cooling the solvent in contact with the germ, the ingot obtained is monocrystalline. The method of the invention in particular reduces the manufacturing costs of components such as infrared detectors and avalanche diodes.

Method of preparing a crystalline ingot of Hg.sub.1-x.sbsb.o

Process for preparing crystals of Hg.sub.1-x Cd.sub.x Te, in which ingots of HgTe and of CdTe are made to pass through a solvent zone, characterized in that it comprises the step of using as solvent a mixture of tellurium, of HgTe and of CdTe in proportions corresponding to thermodynamic balance.

Process for preparing crystals of Hg1-x Cdx Te

Process for obtaining a homogeneous layer of composition Hg.sub.1-x Cd.sub.x Te, comprising the steps of:

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Poitiers, France

Alain R Durand