France Telecom

Orange

Alain Prola

Patrick Schiavone

Maryse Paoli

Annie Tissier

Blandine Minghetti

Eric Schwartz

Andr&eacute; Schiltz

Bruno Girard

A method of correcting topographical effects on a microelectronic substrate, the method comprising the steps consisting in depositing a layer of resin on the structure to be planarized having topography in relief surrounded by isolation zones, and subjecting said resin layer in its zones superposed on underlying zones of high topographical density to photolithography by means of a mask possessing a standard mesh without any one-to-one coincidence with the underlying topography.

Method of correcting topographical effects on a micro-electronic substrate

A process and device for adjusting a photolithographic exposure machine, which is used for manufacturing integrated circuits. A guide wafer being furnished with identical test patterns, these test patterns are successively illuminated with white light beam and the coefficient of reflectivity of each test pattern is thus measured. For each location of the corresponding pattern, the law of correspondence of the coefficient of reflectivity as a function of the defocusing parameter for the illuminating beam is thus established. The optimum sharp focus value is determined by criterion of threshold of the value of the coefficient of reflectivity.

Process for adjusting a photolithographic exposure machine and

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Grenoble, France

Alain Prola