Cadeka Microcircuits, LLC

Technologies Ltrim Inc.

Ltrim Technologies Inc.

Alain Lacourse

Yvon Savaria

Yves Gagnon

Michel Meunier

Mathieu Ducharme

Hugo St-Jean

Hugues Langlois

Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Tunable semiconductor component provided with a current barrier

A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

Method for modifying the impedance of semiconductor devices using a focused heating source

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Laval, Canada

Alain Lacourse