Koninklijke Philips Corporation N.V.

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Other

U.S. Philips Corporation

Alain Inard

Vincent Farys

Olivier Noblanc

Meindert Martin Lunenborg

Srdjan Kordic

Céline Roussel

Walter Jan August De Coster

Philippe Gayet

Franck Arnaud

Walter De Coster

Didier Levy

Dominique Cecile Zulian

Jean Claude Oberlin

Jos Guelen

Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

Optical diffuser and its method of manufacture

A process for fabricating an integrated electrical circuit comprises the formation and then the removal of conducting inserts. Components of the electrical circuit are incorporated into insulating materials superposed on top of a substrate. The process makes it possible to provide an exclusion volume around certain components sensitive to electrostatic coupling, while giving each insulating material a planar surface at the end of a polishing step.

Process for fabricating an electrical circuit comprising a polishing step

An electrical connection device between two conducting tracks of an integrated circuit comprises a first conducting connection between the two tracks. The device further comprises an additional interface of one of the two tracks, different from the interface of the track with the first connection and different from the lateral interface of the track with an insulating material parallel to the flow direction of the electric current in the track. The additional interface is placed at some distance from the first connection which is substantially less than the width of the track. The additional interface may be obtained by placing at least a second conducting connection between the two tracks, or by placing at least one rib in the track, or by placing notches on at least one of the faces of the track.

Electrical connection device between two tracks of an integrated circuit

A method of forming an active area surrounded with an insulating area in a semiconductor substrate, including the steps of forming in the substrate a trench surrounding an active area; filling the trench with an insulating material to form an edge extending beyond the substrate surface at the periphery of the active area; forming a spacer at the periphery of said edge; and implanting a dopant, whereby the implantation in the area located under the spacer is less deep than in the rest of the active area.

MOS transistor in an integrated circuit and active area forming method

The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part ( ) of the substrate ( ).

Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed

The invention relates to a method of forming an insulating zone ( ) around an active zone ( ) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone ( ) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone ( ) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.

Method of forming an insulating zone

Growing community of inventors

Saint Nazaire les Eymes, France

Alain Inard