Alcatel Optronics

Alcatel

Alain Bodere

Leon Goldstein

Hans Bissessur

Elisabeth Gaumont-Goarin

Francedillaois Brillouet

Catherine Graver

Jean Louis Gentner

Daniele Carpentier

A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.

Semiconductor Bragg reflector and a method of fabricating said reflector

A Bragg grating is produced in a semiconductor component by wet etching through a resin mask developed after holographic exposure. This causes the regions of the grating at the boundary of other parts of the component to be etched more deeply. To compensate this, the method includes further irradiation through a second mask disposed at a distance from the part of the resin mask that defines the location of the grating. Applications include opto-electronic components.

Method for integrating a localized bragg grating into a semiconductor

Prior to using etching to form a plateau that is to constitute a laser ridge and that is to be provided with a cover constituting a top electrode, the surface of the cover is initially protected with a dielectric mask and the flanks of the cover are then protected with a dielectric coating. The dielectric coating is initially deposited uniformly over the surface and the flanks. It is then etched by directional means so that it remains on the flanks only. The invention is particularly applicable to making an optical amplifier.

Method of forming a plateau and a cover on the plateau in particular on

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Bruyeres le Chatel, France

Alain Bodere