Motorola Corporation

Freescale Semiconductor,inc.

Infineon Technologies Ag

Infineon Technologies Sc300 Gmbh & Co. Ohg

Alain Bernhard Charles

Karl Emerson Mautz

John George Maltabes

John Maltabes

Karl Mautz

Joseph Petrucci

Ralf Schuster

A lithography and etching method for forming an alignment mark () and at least one device feature (such as a shallow trench) on a wafer () is provided. The etching process () comprises: a first etching step () for pre-defining at least one alignment mark () and a second etching step () for defining desired semiconductor device patterns (such as a shallow trench) on said wafer surface and completing said at least one alignment mark ().

Method for defining alignment marks in a semiconductor wafer

The present invention relates to a system for the manufacture of semiconductor devices by lithography, and in particular to an assembly of mask containers for use in such a system. The system comprises: a plurality of mask containers adapted to engage with one another such that two or more containers can be carried together as a stack; a plurality of lithography bays; a transport rail system for carrying the containers between different lithography bays. Each lithography bay has a transmitter/receiver unit for communicating lithography data with a tracking device located in each container, allowing for more efficient mask management. The transportation of the containers in stacks results in an improvement in efficiency.

Assembly comprising a plurality of mask containers, manufacturing system for manufacturing semiconductor devices, and method

An electronic device ( ) is attached to a container ( ) that carries a lithography mask ( ) through a semiconductor factory ( ) form a first station ( ) to a second station ( ). In the device, a receiver unit ( ) receives first data ( ) indicating how the first station has used the mask in a first process; a memory unit ( ) temporarily stores the first data; a processor unit ( ) processes the first data and provides second data ( ) indicating how the second station uses the mask in a second future process; and a transmitter unit ( ) transmits the second data to the second station or to a factory host.

Manufacturing system method for processing a lithography mask container

An apparatus for compensating light exposure on different, subsequently irradiated target areas ( ) in a photosensitive medium ( ) on a semiconductor wafer ( ). In order to improve exposure dose uniformity the apparatus comprises a mask filter ( ) with a plurality of oblong transparent ( ) and oblong opaque elements ( ) inserted between a light source ( ) and said photosensitive medium ( ) so that light ( ) traverses through said plurality of transparent elements ( ) to expose the photosensitive medium. Each of said plurality of oblong opaque elements ( ) is rotatable around a longitudinal axis ( ) so as to define the area masked by the projection of the opaque element on the photosensitive medium and to continuously adjust a ratio between irradiated and non-irradiated areas on the photosensitive medium.

Continuously adjustable neutral density area filter

A semiconductor method for reducing charge damage during plasma etch processing is disclosed. Structures ( ) for accumulating charge during plasma etch processing are provided on a semiconductor wafer ( ), the structures ( ) being electrically connected to device structures ( ).

Semiconductor structure and method for reducing charge damage

A metrology and probe chuck ( ) holds a flat object ( ), such as a semiconductor wafer ( ) at the backside ( ). The chuck has, supported on a base plate ( ), a plurality of pins ( -n) to receive partial forces (F ) from the backside ( ) and a plurality of piezoelectric elements ( -n) attached to the pins to sense the partial forces (F ) applied from the object ( ) to the pins ( -n). The piezoelectric elements ( -n) apply partial displacements (B ) of the pins ( -n) to act on selected areas of the object ( ) and thereby compensate for irregularities in the backside contour.

Measurement chuck having piezoelectric elements and method

The present invention generally relates to a method for controlling the temperature of a substantially flat object and to a temperature-controlled chuck comprising a chuck body ( ) having an object support side ( ) and a back side ( ). Said object support side ( ) holds a substantially flat object ( ) having a front side ( ) and a back side ( ) on said back side ( ) of said object ( ). A plurality of temperature sensing elements ( ) is distributed on said object support side ( ) to measure the temperature distribution of said flat object ( ). A plurality of individual temperature influencing elements ( ) is distributed on said object support side ( ) to face said back side ( ) of said flat object ( ), each of said temperature influencing elements ( ) being arranged to influence the temperature of a partial area of said object's back side ( ) as desired.

Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

A method of forming structures on a semiconductor wafer ( ) by lithographic and subsequent ion implant steps comprises the steps of: deposition of a resist layer ( ) on a surface of said semiconductor wafer ( ), exposing said resist layer to light of a predetermined wavelength through a reticle and an optical system so as to form an image of said reticle on said semiconductor surface, developing and cleansing said surface of said semiconductor wafer ( ) so as to remove at least partly said resist layer ( ) depending on whether or not said resist layer had been exposed, implantation of ions so as to determine the conductivity of said semiconductor in said cleansed areas of said semiconductor surface. In order to allow the preparation of the resist for all doping profiles in a single processing step it is suggested that the surface energy of the resist ( ) vs. the semiconductor ( ) is chosen so as to accomplish a conglomeration of the resist depending on the density of the structures ( ) on the semiconductor surface.

Method of forming structures on a semiconductor including doping profiles using thickness of photoresist

A lithography chuck (,) holds a flat object (,), such as a semiconductor wafer (,) at the backside (,). The chuck has, supported on a base plate (,), a plurality of pins (,-n) to receive partial forces (F,) from the backside (,) and a plurality of piezoelectric elements (,-n) attached to the pins to sense the partial forces (F,) applied from the object (,) to the pins (,-n). The piezoelectric elements (,-n) apply partial displacements (B,) of the pins (,-n) to act on selected areas of the object (,) and thereby compensate for irregularities in the backside contour.

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Singapore, Singapore

Alain Bernhard Charles