Applied Materials, Inc.

Ala Moradian

Kartik Bhupendra Shah

Zuoming Zhu

Shu-Kwan Danny Lau

Zhiyuan Ye

Errol Antonio C Sanchez

Patricia M Liu

Zhepeng Cong

Enle Choo

Umesh M Kelkar

Karthik Ramanathan

Bindusagar Marath Sankarathodi

Manjunath Subbanna

Flora Fong-Song Chang

Elizabeth Neville

Orlando Trejo

Surendra Singh Srivastava

Michael Robert Rice

Tetsuya Ishikawa

Schubert S Chu

Swaminathan T Srinivasan

Prashanth Kothnur

Brian Hayes Burrows

Peter Reimer

Saurabh Chopra

Matthias Bauer

Ashur J Atanos

Jenny Lin

Tao Sheng

Nimrod Smith

Vinh N Tran

Sergey Meirovich

Abhishek Dube

Martin Jeffrey Salinas

Vishwas Kumar Pandey

Martin A Hilkene

Mark Robert Denome

Chia Cheng Chin

Vilen K Nestorov

Maxim Shaposhnikov

Travis Tesch

Jeonghoon Oh

Zheng Yuan

John Tolle

Nyi O Myo

Lori D Washington

Lin Zhang

Gopalakrishna B Prabhu

Errol C Sanchez

Colin John Dickinson

Shuran Sheng

Shreyas Kher

Richard Omar Collins

Toshiyuki Nakagawa

James Omer L'Heureux

Ji-Dih Hu

Danny D Wang

Sohrab Zokaei

Dinkesh Huderi Somanna

Marc David Shull

Thomas Kirschenheiter

Avinash Ishwar Shervegar

Shainish Nellikka

Balakrishnam R Jampana

Jyothi Rajeevan

Rohit Mahakali

Avinash Shervegar

Erika R Warrick

Anup Kumar D Doddamane

Mudit Pasagadagula

Chandra Mohapatra

A method includes receiving, via a graphical user interface (GUI), by a processing device, a first user input to view data associated with a first process chamber in a first chamber data mode. Data of the first chamber data mode includes data of a process operation performed in the first process chamber. The method further includes providing, for display on the GUI, first display data of the first data chamber mode responsive to receiving the first user input. The method further includes receiving a second user input to view data associated with the first process chamber in a second chamber data mode. Data of the second chamber data mode includes data of a virtual process operation performed by a virtual representation of the first process chamber. The method further includes providing, for display on the GUI, second display data of the second data chamber mode.

Comprehensive modeling platform for manufacturing equipment

The present disclosure relates to a radiation reflector assembly for use with a semiconductor processing chamber and a substrate processing system having the radiation reflector assembly. The radiation reflector assembly includes a shell body that includes an interior cylindrical wall; and a reflector disk that includes a center hole, a bottom reflective surface, and a top surface. The reflector disk is disposed within and spaced from the interior cylindrical wall in a manner that permits fluid to flow therebetween. The radiation reflector assembly includes an actuator coupled to the reflector disk, and the actuator is operable to axially displace the reflector disk relative to the shell body. The radiation reflector assembly includes an elongated tube extending through the center hole of the reflector disk. A method of processing a substrate with the radiation reflector assembly is also described.

Movable central reflectors of semiconductor processing equipment, and related systems and methods

The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

Methods of correlating zones of processing chambers, and related systems and methods

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Process kits and related methods for processing chambers to facilitate deposition process adjustability

Methods for detection using optical emission spectroscopy in which an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Methods for detection using optical emission spectroscopy

A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

Eco-efficiency (sustainability) dashboard for semiconductor manufacturing

The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

In-situ epi growth rate control of crystal thickness micro-balancing sensor

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

A method and apparatus for providing uniform heating of substrates disposed within a processing chamber is provided. The apparatus includes one or more heating coils disposed in the processing chamber. The one or more heating coils are electrically coupled to a power source using heater rods. The heater rods are coupled to a socket on a distal end opposite the connection to the heating coils. The socket includes a feedthrough and a cooling plate configured to remove contaminants, such as methane, from the area surrounding the heater rod.

Chamber body feedthrough for in chamber resistive heating element

Technologies directed to cooling flow according to predicted cooling parameters for substrate processing are described. In some embodiments, a method includes receiving first data indicative of a process recipe for processing a substrate in a processing chamber of a substrate processing system. The method further includes inputting the first data into a model. The model includes a digital twin configured to represent thermal characteristics of the processing chamber. The method further includes receiving, via the model, a predicted value of a parameter associated with a flow of coolant through a cooling loop of the processing chamber. The method further includes causing coolant to flow through the cooling loop based on the predicted value of the parameter during execution of the process recipe in the processing chamber.

Cooling flow in substrate processing according to predicted cooling parameters

A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

Epitaxial deposition chamber

Technologies directed to an eco-efficiency monitoring and exploration platform for semiconductor manufacturing. One method includes receiving, by a processing device, first data indicating an update to a substrate fabrication system having a first configuration of manufacturing equipment and operating to one or more process procedures. The method further includes determining, by the processing device, using the first data with a digital replica, environmental resource data. The digital replica includes a digital reproduction of the substrate fabrication system. The environmental resource usage data indicates an environment resource consumption that corresponds to performing the one or more process procedures by the substrate fabrication system incorporating the update. The method further includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

Eco-efficiency monitoring and exploration platform for semiconductor manufacturing

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber

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Sunnyvale, CA, United States of America

Ala Moradian