Entegris, Inc.

Akshay Rajopadhye

Youngmin Kim

Michael L White

Rajiv K Singh

Daniela White

Atanu Das

Sunny De

Aditya D Verma

The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

Cleaning composition with molybdenum etching inhibitor

The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.

Polishing of transition metals

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Gainesville, FL, United States of America

Akshay Rajopadhye