Oki Electric Industry Co., Ltd.

Sicoxs Corporation

Kabushiki Kaisha Toyota Jidoshokki

National Institute of Advanced Industrial Science and Technology

Akiyuki Minami

Satoshi Machida

Hidetsugu Uchida

Ko Imaoka

Motoki Kobayashi

Takamitsu Kawahara

Kuniaki Yagi

Toyokazu Sakata

Naoki Hatta

Tomoatsu Makino

Toshihisa Shimo

Hideki Takagi

Takanori Murasaki

Yuuichi Kurashima

Koji Takaya

Mitsuharu Kato

A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1&#xd7;10(atoms/cm) or more of particular atoms.

Semiconductor substrate

A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Semiconductor substrate and method for manufacturing semiconductor substrate

A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Manufacturing method for semiconductor substrate

A semiconductor non-volatile memory cell includes an Si (silicon) layer containing substrate including an activation region having a ridge portion; an element separation region embedded in both sides of the activation region; a gate electrode with a gate insulation film inbetween formed over the ridge portion for covering a part of both side surfaces of the ridge portion and an upper surface of the element separation region; a channel forming region formed in a surface layer region of the ridge portion; an extension region formed on both sides of the channel forming region in the longitudinal direction; and an electric charge accumulation layer capable of accumulating electric charges and a sidewall formed on the extension region and one or both of side surfaces of the gate electrode facing with each other in the longitudinal direction.

Semiconductor non-volatile memory having semiconductor non-volatile memory cell with electric charge accumulation layer, and method of producing the same

In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle ( ) formed with reticle alignment marks ( ) at at least two points is used, reticle microscopes ( ) are respectively placed in association with positions of the reticle alignment marks ( ) at the time that the reticle ( ) is supported by a reticle stage ( ) and rotated about an optical axis (Z axis) of an image-forming optical system ( ) by 90&deg;, and the reticle alignment marks ( ) are detected by any reticle microscope ( ) even if the reticle ( ) being supported by the reticle stage ( ) is rotated about the Z axis.

Apparatus and method for exposure

A method for manufacturing a highly reliable alignment mark in which by-products do not form at an aligning mark position during patterning. In this method, an intermediate layer is disposed on an upper layer of a first wiring to protect the first wiring. Then, a filling material is coated thereon to fill in a through hole. Thereafter, a plug is formed by etch-backing, and a second wiring is formed.

Method of manufacturing alignment mark

A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.

Resist mask for measuring the accuracy of overlaid layers

Method for manufacturing semiconductor wafer having resist mask with measurement marks for measuring the accuracy of overlay of a photomask

Resist mask having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer

Resist mark having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer and method for manufacturing semiconductor wafer having it

An alignment mark which is employed for the alignment of a semiconductor substrate during a lithography process in the production of a semiconductor element, includes a trough-like pattern having a width roughly equal to the width of a circuit element provided at the surface of the semiconductor substrate. Since the width of the trough-like pattern is set roughly equal to that of the circuit element, a secure trough-like pattern that will not be removed to an excessive degree during processes such as etch-back is formed at the surface of the semiconductor substrate, even if the alignment mark is formed concurrently with the formation of the circuit element. Consequently, a clear alignment mark that can be produced concurrently with the formation of a circuit element of the semiconductor circuit element and that presents no risk of collapsing or separating, is provided.

Growing community of inventors

Tokyo, Japan

Akiyuki Minami