Hamamatsu-photonics K.k.

Kyoto University

Mitsubishi Electric Corporation

Rohm Co., Ltd.

Akiyoshi Watanabe

Kazuyoshi Hirose

Susumu Noda

Takahiro Sugiyama

Yoshitaka Kurosaka

Hirofumi Kan

Hirofumi Miyajima

Hitoshi Kitagawa

Kousuke Shibata

Yong Liang

Hiroki Kamei

Takeshi Kanzaki

Hiroki Miyachi

Ryoichi Kashiro

Shinichi Furuta

A three-dimensional measurement device includes one or a plurality of light source units configured to irradiate the object to be measured SA with measurement light having a predetermined pattern, one or a plurality of image capture units configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured on the basis of results of image capture performed by the image capture units. The light source units are constituted by an S-iPMSEL of M-point oscillation.

Three-dimensional measurement device

One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

Light-emitting element and light-emitting device

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

Two-dimensional photonic crystal surface emitting laser

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laserX includes: a two-dimensional photonic crystalincluding a plate-shaped base memberand modified refractive index regionswhere the modified refractive index regionshave a refractive index different from that of the plate-shaped base memberand are two-dimensionally and periodically arranged in the base member; an active layerprovided on one side of the two-dimensional photonic crystal; and a first electrodeA and a second electrodeprovided sandwiching the two-dimensional photonic crystaland the active layerfor supplying current to the active layer, where the second electrodecovers a region equal to or wider than the first electrodeA, wherein the first electrodeA is formed so as to supply the current to the active layerwith a different density depending on the in-plane position on the first electrodeA.

A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Laser device

A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.

Semiconductor laser module

In a laser device, a different refractive index regionB of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regionsB is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

A semiconductor laser element is realized with high beam quality (index M&#x3c;1). A diffraction gratingof a diffraction grating layerextends along a principal surfaceand is provided on a p-side surfaceof the diffraction grating layer; the refractive index of the diffraction grating layerperiodically varies in directions extending along the principal surface, in the diffraction grating; the diffraction gratinghas a plurality of holes; the plurality of holesare provided in the p-side surfaceand arranged in translational symmetry along a square lattice R; the plurality of holeseach have the same size and shape; each holecorresponds to a lattice point of the diffraction gratingand is of a triangular prism shape; a shape of a bottom faceof the holeis an approximate right triangle.

Semiconductor laser element

The present edge-emitting semiconductor layer element includes two-dimensional photonic crystalsformed in a semiconductor layer, and when one direction of a contact region of an electrodeis provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystalsare, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Edge-emitting semiconductor laser element

When an end-face-emitting photonic crystal laser elementis seen in an X axis, one end of an upper electrode Eoverlaps a laser light exit surface SF, the upper electrode Eand an opposite end face SB are separated from each other, the upper electrode Eis separated from both lateral end faces SR, SL, and one end of an active layerB overlaps the laser light exit surface SF.

End-face-emitting photonic crystal laser element

According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (&#x3b4;&#x3b8;) with respect to a lengthwise direction of a first driving electrode (E) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (&#x3b8;3) of the other laser beam is set to be less than 90 degrees.

Semiconductor laser element and laser beam deflecting device

A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layerobtained by periodically forming a plurality of holes H in a basic layerA comprised of a first compound semiconductor of the zinc blend structure and growing embedded regionsB comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layerto supply light to the photonic crystal layer, in which a principal surface of the basic layerA is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Semiconductor surface light-emitting element and method of manufacturing thereof

In an active layerof a semiconductor laser device, a refractive index type main waveguideis formed by a ridge portionof a p-type clad layer. Side surfacesandof the main waveguideform a relative angle &#x3b8;, based on a total reflection critical angle &#x3b8;c at the side surfacesand, with respect to a light emitting surfaceand a light reflecting surface. The main waveguideis separated by predetermined distances from the light emitting surfaceand the light reflecting surface, and optical path portionsand, for making a laser light Lpass through, are disposed between one end of the main waveguideand the light emitting surfaceand between the other end of the main waveguideand the light reflecting surface. The optical path portionsandare gain type waveguides and emit light components Land L, which, among the light passing through the optical path portionsand, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

Semiconductor laser device and semiconductor laser device array

The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.

Semiconductor laser device and semiconductor laser element array

The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle &#x3b8;, which is equal to or less than the complementary angle &#x3b8;c of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.

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Hamamatsu, Japan

Akiyoshi Watanabe