Sharp Kabushiki Kaisha Corporation

Akiyoshi Mutou

Katsumasa Fujii

Tomoya Baba

A SiOfilm serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450&#xb0; C. and 494&#xb0; C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.

Method of manufacturing a semiconductor device with a silicon-germanium gate electrode

A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.

Growing community of inventors

Ibaraki, Japan

Akiyoshi Mutou