Sharp Kabushiki Kaisha Corporation

Akiyoshi Mikami

Koichi Tanaka

Masaru Yoshida

Kousuke Terada

Kouji Taniguchi

Shigeo Nakajima

Takashi Ogura

Katsushi Okibayashi

Hiroaki Nakaya

Takuo Yamashita

Koji Taniguchi

Mikihiro Noma

Hiroyuki Shimoyama

Kouji Tanaguchi

Koji Ianiguchi

The object of the invention is to provide UV light of increased luminous intensity. Layered on one surface of a translucent substrate are a transparent electrode, a first insulating layer, an EL layer, a second insulating layer, and a metal electrode, in that order. A compound of the general formula: Zn.sub.(1-x) Mg.sub.x S is selected as a host material of the EL layer, and Gd or a Gd compound is selected as the luminescence center. The composition ratio x of the compound selected as a host material is selected to be within the range of 0.33.ltoreq.x&lt;1, and preferably within the range of from 0.4-0.8, inclusive. This selection allows the band gap energy of the host material to be higher than the band gap energy of the luminescence center, thus preventing the absorption of the emitted light by the host material and providing UV light of increased luminous intensity.

Thin-film luminescence device utilizing Zn.sub.(1-x) Mg.sub.x S host

To reduce the thickness of liquid crystal display device and enhance its performance by integrating the liquid crystal display element and light source. One surface of a substrate and one surface of a substrate are adhered with an adhesive layer through an intervening liquid crystal layer. On the other surface of the substrate, an EL light source is mounted, that is, a glass substrate on which a first electrode, a first insulation layer, a phosphor layer, a second insulation layer, and a second electrode are laminated in this sequence is bonded with an insulation layer. Therefore, the liquid crystal display device may be reduced in thickness and enhanced in performance.

Liquid crystal display device having an EL light source in a non-display

A process for preparing an electroluminescent film which comprises causing a substrate held at a high temperature to simultaneous contact two kinds of vapors of (a) Group II element and a Group VI element or a compound thereof, capable of forming a Group II-VI compound semiconductor, and (b) a halide of an element capable of acting as luminescent centers in the Group II-VI compound semiconductor, in the presence of flowing hydrogen or an inert gas, whereby a thin electroluminescent film comprising the Group II-VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.

Process for preparing an electroluminescent film

Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

Method of manufacturing an electroluminescent device

A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

Electroluminescent panel

A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.

Vapor deposition apparatus for using solid starting materials

In a manufacturing method for an electroluminescent thin film, a base material made of a II-VI group compound semiconductor and a material of an element for an emission center to be included in the base material are provided separately in first and second gas passages provided in a source zone on the upstream side of a reaction tube. The base material is transported to a growth zone on the downstream side thereof through the first gas passage by the use of an inert carrier gas, while the element material is transported through the second gas passage in the form of a halogen compound vapor, so as to grow an electroluminescent thin film on a substrate disposed in the growth zone. A reducing gas is fed to the growth zone through a third gas passage which bypasses the source zone from the upstream side to the downstream side of the reaction tube.

Manufacturing method for electroluminescent thin film

An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

Apparatus for vapor deposition

A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the same apparatus without decreasing a growth rate of the film. Accordingly, EL displays having a large area which possess a high quality and can be manufactured efficiently.

Process for preparing an electroluminescent thin film

Multi-color electroluminescent panel

Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

Process for preparing a thin film electroluminescent device

A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.

Process for preparing an electroluminescent device

Disclosed is an improvement of a process for producing a thin film electroluminescent device wherein the luminescent film is formed by a CVD method. The improvement residues in that an unnecessary portion of the luminescent layer, which is inherently formed if the CVD method is employed, is removed by etching.

Process for producing a thin film electroluminescent device

Electroluminescent device

A thin film electroluminescent(EL) device includes a luminescent layer, both sides of which are covered with insulating layers, and at least one pair of electrodes sandwiching the luminescent layer through the insulating layers. The luminescent layer is composed of zinc sulfide in which Gd and a luminously effective amount of a rare earth element, acting as luminescent center, are doped at a total amount of 1-4 atomic percent.

Growing community of inventors

Yamatotakada, Japan

Akiyoshi Mikami