Ngk Spark Plug Company, Limited

Akiyasu Okuno

Masakazu Watanabe

Kazuhiko Ikoma

Satoshi Iio

Yasushi Matsuo

Junichiro Suzuki

Isamu Fukuura

Shoji Sakakibara

Hitoshi Yokoi

Shunkichi Nozaki

A ceramic cutting tool of a TiC-based sintered body containing 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body, said SiC whisker having a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may include up to 40 wt % of Al.sub.2 O.sub.3, and may further contain sintering aid. Up to 40% by weight of TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solution of said nitrides, oxides and borides of Ti to form a TiC-base composition. The TiC-base composition may be represented by (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g where: M denotes at least one of transition metal elements of Groups IVa, Va and VIa, except Ti, according to the International Periodic Table; and a+b=1, 0&lt;b.ltoreq.0.5, c+d+e+f=1, 0.5 .ltoreq.c.ltoreq.1.0, 0.ltoreq.d.ltoreq.0.5, 0.ltoreq.e.ltoreq.0.3, 0.ltoreq.f.ltoreq.0.5, 0.6.ltoreq.g.ltoreq.1.1.

Process for making TiC-base/SiC whisker composite ceramic cutting tools

A ceramic cutting tool formed of a TiC-based sintered body contains 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body. The SiC whisker has a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may contain up to 40 wt % of Al.sub.2 O.sub.3, and further sintering aids. Up to 40% by weight of the TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solutions of these nitrides, oxides and borides of Ti to form a TiC-base composition. The TiC base composition may be represented by the formula (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g, in which M denotes at least one transition metal element of Groups IVa, Va and VIa according to the International Periodic Table, except Ti; and a+b=1, 0&lt;b.ltoreq.0.5, c+d+e+f=1; 0.5 c.ltoreq.1.0; 0.ltoreq.d.ltoreq.0.5; 0.ltoreq.e.ltoreq.0.3; 0.ltoreq.f.ltoreq.0.5; and 0.6.ltoreq.g.ltoreq.1.1.

TiC-base/SiC whisker composite ceramic cutting tools

AlN-base sintered body with a high thermal caonductivity is produced by:

Process for producing aluminum nitride sintered body with high thermal

AlN-base sintered body with a high thermal conductivity is produced by: preparing a compact of a material comprising 100 parts by weight of aluminum nitride and 0.1-10 parts by weight, calculated on metal element, of at least one component selected from the group consisting of elements of Group 4a, 5a and 6a of the Periodic Table, and compounds thereof; and sintering said compact at a temperature ranging from 1500.degree. to 2000.degree. C. under a non-oxidizing atmosphere having a source of boron and/or carbon supply. The compounds include oxides, borides, nitrides and carbides. The elements include W, Mo, Ta and Ti. Oxides are converted to other compounds through sintering. This AlN-base sintered body has good wettability with metal for metallization and enables simultaneous sintering with metallization layer. Multilayer laminated circuit boards or substrates thereof can be produced.

Aluminum nitride sintered body with high thermal conductivity and

Whisker-reinforced ceramics with high fracture toughness and strength consists essentially of 5-40 weight % SiC including SiC whiskers, 1-30 weight % of at least one kind of oxides of elements selected from the group consisting of Al, Sc, Y and rare-earth elements, and the balance being silicon oxynitride constituents, wherein said SiC whiskers are present in an amount of no less than 5 weight % of the total essential constituents. The silicon oxynitride constituents are Si.sub.2 N.sub.2 O or a mixture of silicon nitride and silica (0.83-1.22 by molar ratio), or a mixture of Si.sub.2 N.sub.2 O and said mixture of silicon nitride and silica. Silicon oxynitride and SiC phases are predominant.

Whisker-reinforced ceramics

A composite ceramic material reinforced with silicon carbide whiskers consists essentially of 5 to 45% by weight of SiC whiskers, 3 to 20% by weight of at least one selected from the group consisting of oxides and oxynitrides of zirconium calculated on zirconium, and the balance being a SiZlON-based ceramic substance. The SiAlON-based ceramic substance consists essentially of a substance selected from the group consisting of .beta.-SiAlON represented by a compositional formula of Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z (where 0&lt;z.ltoreq.1) and an .alpha.,.beta.-composite SiAlON made up of said .beta.-SiAlON and an .alpha.-SiAlON of the formula M.sub.x (Si,Al).sub.12 (O,N).sub.16, where M denotes at least one selected from the group consisting of Li, Ca, Mg, Y and rare earth metals and 0&lt;x.ltoreq.2; and 1 to 25% by weight of a glass phase containing therein Zr, Si, Al, O and N, or further at least one selected from the group consisting of Y, Mg, Ca and rare earth metals. This composite material has high strength and toughness suitable for articles requiring high wear and heat resistance such as cutting tools or ceramic valves for internal combustion engines.

Composite ceramic material reinforced with silicon carbide whiskers

A surface structure of A1N substrate comprising:

Surface structure of A1N substrate and a process for producing the same

AlN-base sintered body with a high thermal conductivity is produced by:

A surface structure of AlN substrate comprising:

Surface structure of AlN substrate and a process for producing the same

A composite layer aluminum nitride-base sintered body has on at least one surface of AlN-base sintered body having a first layer and a second layer. The first layer is 100 parts by weight of at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof as a first component (s), and 0.1-50 parts by weight of AlN second component. The second layer has at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof. The thickness of said first layer is 0.5-40 .mu.m, and the sum of thickness of the first and second layers is 1-50 .mu.m. The AlN may also include sintering aids of oxides of rare earth metal and alkaline earth metals. Hydrides and oxides of Ti, Zr, Nb, V and Mn may be included in the first layer composition.

Composite layer aluminum nitride base sintered body

A microwave absorber composed of dense silicon carbide having an electrical resistivity of one ohm-centimeter or more. In an electron linear accelerator, it is necessary to provide a microwave absorber to absorb excess energy used to accelerate electrons and discharge this excess energy in the form of heat in order for the accelerator to operate safely. The important characteristics are high-frequency wave absorption, good heat resistance, good thermal conductivity, and stability in a vacuum. The invention meets these requirements with a microwave absorber composed of dense silicon carbide. In an electron linear accelerator the absorber is attached to the end portion of an accelerator guide or a branch portion of a power divider to absorb unnecessary wave energy. Such a microwave absorber is found to have characteristics rendering it highly suitable for this application as well as others.

Dense silicon carbide microwave absorber for electron linear accelerator

A silicon carbide-graphite composite material is disclosed. The composite material includes graphite as a secondary phase which is segregated along the grain boundaries of all the silicon carbide grains. The graphite has an average grain size of not more than 3 .mu.m and is present in a proportion of 1 to 20 vol % based on the volume of the silicon carbide. The composite material has a density greater than 90% of the theoretical density. The composite material is a high density and high strength material.

Silicon carbide-graphite composite material

A composite layer aluminum nitride-base sintered body has on at least one surface of AlN-base sintered body having a first layer and a second layer. The first layer is 100 parts by weight of at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof as a first component(s), and 0.1-50 parts by weight of AlN second component. The second layer has at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof. The thickness of said first layer is 0.5-40 .mu.m, and the sum of thickness of the first and second layers is 1-50 .mu.m. The AlN may also include sintering aids of oxides of rare earth metal and alkaline earth metals. Hydrides and oxides of Ti, Zr, Nb, V and Mn may be included in the first layer composition.

A silicon carbide-graphite composite material is disclosed. The composite material includes graphite as a secondary phase which are dispersed uniformly in a grain boundary of the silicon carbide. The graphite have an average grain size of not more than 3 .mu.m and are present in a proportion of 1 to 20 vol % based on the volume of the silicon carbide. The composite material has a density greater than 90% of the theoretical density. A process for producing the silicon carbide-graphite composite material is also disclosed. The composite material is a high-density and high-strength material.

Silicon carbide-graphite composite material and process for producing

A process for producing a silicon carbide heating element is disclosed comprising: adding boron or a boron compound in an amount corresponding to from 0.3 to 3.0% by weight as boron, and carbon or a carbon compound in an amount corresponding to from 0.1 to 6.0% by weight as carbon, to a SiC powder having an average particle size of 1.0.mu. or less; blending and molding the mixture; conducting a primary sintering in vacuum or in an inert atmosphere, except nitrogen; and thereafter conducting a secondary sintering at from 1500.degree. to 2300.degree. C. in a pressurized nitrogen atmosphere to produce a silicon carbide heating element having a density of at least 80% based on the theoretical density and an electrical resistivity of 1.0 .OMEGA.-cm or less.

Growing community of inventors

Kani, Japan

Akiyasu Okuno