Kabushiki Kaisha Toshiba

Samsung Electronics Co., Ltd.

Akiya Kimura

Susumu Obata

Kazuhito Higuchi

Akihiro Kojima

Toshiya Nakayama

Yoshiaki Sugizaki

Yosuke Akimoto

Kazuo Shimokawa

Hisashi Ito

Tomohiro Iguchi

Hideo Nishiuchi

Akihiro Sasaki

Miyuki Izuka

Hideto Furuyama

Miyoko Shimada

Hiroshi Koizumi

Yoshiaka Sugizaki

According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.

Semiconductor device and semiconductor element with improved yield

According to one embodiment, a semiconductor module includes a first circuit component, a first connection member, and a first wire. The first circuit component includes a first substrate, a first conductive layer, a first switching device, and a first diode. The first substrate has an insulation property. The first connection member is provided on a first electrode of the first switching device and the fourth electrode of the first diode, and has a conductive property. The first wire connects the first conductive layer and the first connection member.

Semiconductor module

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Semiconductor light emitting device

A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.

Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

According to one embodiment, a semiconductor light emitting element includes: a first conductive pillar extending in a first direction; a second conductive pillar extending in the first direction; a first semiconductor layer of a first conductivity type provided on the first conductive pillar; a light emitting layer provided on the first semiconductor layer; a second semiconductor layer of a second conductivity type provided on the light emitting layer and on the second conductive pillar; a sealing unit covering a side surface of the first conductive pillar and a side surface of the second conductive pillar; and a light transmissive layer provided on the second semiconductor layer and having light transmissivity, a hardness of an upper surface portion of the light transmissive layer being higher than a hardness of a lower portion between the upper surface portion and the second semiconductor layer.

Semiconductor light emitting element and method for manufacturing same

According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.

Semiconductor light-emitting device and manufacturing method of the same

According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

Growing community of inventors

Kanagawa-ken, Japan

Akiya Kimura