Sharp Kabushiki Kaisha Corporation

Akitoshi Yokota

Yukihiko Nakata

Hitoshi Sannomiya

Manabu Itoh

Yasumi Inoue

Sota Moriuchi

A photovoltaic device includes a semi-continuous metal layer having an uneven surface, which is not uniform, formed on a substrate, a reflective continuous metal layer having a substantially uniform thickness formed to cover the semi-continuous metal layer, a semiconductor film for photoelectric conversion formed on the reflective continuous metal layer, and a transparent electrode formed on the semiconductor film.

Photovoltaic device with porous metal layer

An amorphous semiconductor solar cell includes an i type layer which is an at least partially alloyed, substantially intrinsic semiconductor, an n type layer formed on one side of the i type layer, and a p type layer formed n the other side of the i type layer, and the i type layer has its energy bandgap varied in a thickness direction to have a bandgap larger than the bandgap of the p type layer in the vicinity of the interface with the p type layer.

Amorphous semiconductor solar cell

An amorphous solar cell is provided having a junction structure of a p layer, an i layer and n layer where an electromotive force is generated when the cell is irradiated by light. The amorphous solar cell includes an upper cell and a lower cell which each have an i layer. The upper and lower cells are stacked so that the upper cell is located on the light incident side. An output end of the upper cell and an output end of the lower cell are connected in parallel. The thickness of the i layer of the lower cell is 3000 .ANG. or less. Because the thickness of the i layer of the lower cell is 3000 .ANG. or less, the amorphous solar cell has a high initial photoelectric conversion efficiency and properties which are unlikely to be degraded by light.

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Nara, Japan

Akitoshi Yokota