Transphorm Inc.

Akitoshi Mochizuki

Toshihide Kikkawa

Masahito Kanamura

Tsutomu Hosoda

Kenji Kiuchi

A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.

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Fukusima, Japan

Akitoshi Mochizuki