Kabushiki Kaisha Toshiba

Akitoshi Kumagae

Iwao Higashikawa

Shinichi Ito

Hideaki Sakurai

Katsuya Okumura

Hiroshi Nomura

Tsunetoshi Arikado

Toru Ushirogouchi

Kazuo Sato

Yasunobu Onishi

Yoshihito Kobayashi

Tsukasa Tada

Rumiko Hayase

Hirokazu Niki

Masataka Miyamura

Naohiko Oyasato

Disclosed is an apparatus for heating a target substrate by means of light irradiation. The heating apparatus includes a substrate support section for supporting the target substrate, an irradiating light generating section for irradiating the light irradiating regions of the target substrate supported by the substrate support section, and a light irradiating region changing section for changing the light irradiating regions of the target substrate irradiated with the light generated from the irradiating light generation section.

Heat treating method and heat treating apparatus

Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which light irradiation treatment is applied to the target substrate such that the light irradiation regions of the target substrate do not overlap with each other, the light irradiation treatment being performed by using an irradiating light adjusted such that the distribution of the light intensity within the light irradiation region of the target substrate is rendered uniform.

A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.

Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface

Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.

An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

Alignment mark, manufacturing method thereof, exposing method using the

Alignment mark for use in making semiconductor devices

A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.

Pattern forming method including the formation of an acidic coating

Resist containing novolak prepared by condensating halogenated phenol represented by the following formula (III) and one or more phenol derivatives selected from the group consisting of cresol, xylenol, tet-butylphenol and propenylphenol, with a carbonyl compound ##STR1## wherein R.sub.3 is an halogen atom selected from the group consisting of F, Cl, and Br. If the resist is used as a positive-type one, it further contains a photo-sensitive agent, and R.sub.3 in the formula (III) is either F or Br. If the resist is used as a negative-type one, it further contains a photosensitive agent and/or a sensitizer, and R.sub.3 in the formula (III) is either Cl or Br.

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Ichikawa, Japan

Akitoshi Kumagae