Hitachi, Ltd.

Director-general of the Agency of Industrial Science and Technology

Akitoshi Ishizaka

Masakazu Sagawa

Toshiaki Kusunoki

Mutsumi Suzuki

Makoto Okai

Yasuhiro Shiraki

Toshikazu Shimada

Yoshimasa Murayama

Masao Kondo

Hiroshi Yamamoto

Tokuo Kure

Eiichi Murakami

Tohru Nakamura

Eiichi Maruyama

Yoichi Tamaki

Masanobu Miyao

Kazuhiko Sagara

Yoshifumi Katayama

Hirokazu Matsubara

Akira Shintani

Seiichi Iwata

Takashi Ohshima

Kiyokazu Nakagawa

Hiroyuki Etoh

Seijiro Furukawa

The present invention provides an image display capable of reducing power used up or consumed by a thin-film electron-emitter matrix. As a typical one, there is provided an image display which comprises a display device including a first plate which has a plurality of electron-emitter elements each having a structure comprised of a base electrode, an insulating layer and a top electrode stacked on one another in this order, the electron-emitter element emitting electrons from the surface of the top electrode when a voltage of positive polarity is applied to the top electrode; a plurality of first electrodes for respectively applying driving voltages to the base electrodes of the electron-emitter elements lying in a row direction, of the plurality of electron-emitter elements; and a plurality of second electrodes for respectively applying driving voltages to the top electrodes of the electron-emitter elements lying in a column direction, of the plurality of electron-emitter elements, a frame component, and a second plate having phosphors, wherein a space surrounded by the first plate, the frame component and the second plate is brought into vacuum. In the image display, the first electrode and/or the second electrode held in a non-selected state is set to a high-impedance state.

Image display and method of driving image display

Thin film electron emitter, display device using the same and applied machine

A process for manufacturing a thin-film electron source including a lower electrode ( ), an upper electrode, and an insulating layer sandwiched between the lower electrode ( ) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode ( ) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode ( ) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer ( ) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.

Thin-film electron source, process for manufacturing thin-film electron source, and display

Films of desired metal, e.g., Ni or Co, and of Si are laminated alternately n a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.

Method of forming a metal silicide film

Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.

Semiconductor device with buried side contact

The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.

Semiconductor device with crystalline silicon-germanium-carbon alloy

A semiconductor device includes a multilayer semiconductor structure comprising alternately p- (or n-) type heavily doped semiconductor layers and n- (or p-) type lightly doped semiconductor layers. Holes (or electrons) are confined within a narrow layer in a fashion like a two-dimensional gas, whereby high mobility is realized notwithstanding of high carrier concentration. Electrical conductivity of the multilayer semiconductor structure can be made higher than that of a bulk semiconductor. Very high conductivity can be realized by forming each layer in a thickness within a range of 10 .ANG. to 1000 .ANG. and preferably 50 .ANG. to 500 .ANG.. Ratio in impurity concentration of the heavily doped layer to the low doped layer is not smaller than one order of magnitude.

Semiconductor device having doping multilayer structure

A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element. The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.

Thin film solar cell

A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.

Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes

Growing community of inventors

Chiba, Japan

Akitoshi Ishizaka