Kabushiki Kaisha Toshiba

Akito Yoshida

Morihiko Ikemizu

Seiichi Hirata

Kenji Uehara

Nobuhito Suzuya

Terunari Takano

A semiconductor device has a plurality of input/output terminals formed on the inner region on a semiconductor substrate, and a plurality of die testing terminals formed on the peripheral region on the semiconductor substrate, and the input/output terminals and the die testing terminals are connected to each other by a metal wiring layer. Die testing is performed by bringing probes projecting from a probe card into contact with the plurality of die testing terminals.

Semiconductor device with flip-chip structure and method of manufacturing the same

A semiconductor chip having a plurality of electrodes on its surface is fixed onto a die pad. The leads are spaced away from the die pad and connected to the electrodes of the semiconductor chip by means of a TAB tape. The die pad is substantially equal in size to the insulation film of the TAB tape. The die pad has a plurality of resin circulating holes around the semiconductor chip. The resin circulating holes are arranged such that a fluid resin sufficiently flows into a narrow area between the TAB tape and die pad. On the die pad, portions each between adjacent resin circulating holes serves as heat conducting paths. The heat generated from the semiconductor chip is transmitted to the entire region of the die pad through the heat conducting paths and then radiated outside.

Resin sealed semiconductor device including a die pad uniformly having heat conducting paths and circulating holes for fluid resin

Resin sealed semiconductor device including a die pad uniformly having

An insulating film is formed on a semiconductor substrate, and an Al electrode pad is provided on the insulating film. The pad is electrically connected to a positive element by means of a signal line. A protection film is formed on the pad and insulating film. First and second openings are formed in the protection film. A barrier metal layer is formed on the inner periphery of the first opening and on the protection film. An Au bump is formed on the barrier metal layer. The Al electrode pad is exposed through the second opening.

Semiconductor device

Semiconductor device having an opening and method of manufacturing the

A tape carrier body is provided with a mounting portion on which a semiconductor integrated circuit is mounted and a plurality of test pads which are disposed away from the mounting portion. The semiconductor integrated circuit is provided with a power supply pad to which a supply voltage is applied and a plurality of signal pads for inputting and outputting signals, the number of the test pads being larger than the total number of the power supply pad and the signal pads. The signal pads of the semiconductor integrated circuit and the test pads of the tape carrier body are connected by outer leads. The power supply pad of the semiconductor integrated circuit and outside test pad of the test pads of the tape carrier body are connected by an outer lead.

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Chigasaki, Japan

Akito Yoshida