Panasonic Intellectual Property Management Co., Ltd.

Akito Inoue

Yuki Sugiura

Yutaka Hirose

Motonori Ishii

Mitsuyoshi Mori

Yusuke Sakata

Hideyuki Arai

Kentaro Nakanishi

Tatsuya Kabe

Hisashi Aikawa

Shigetaka Kasuga

Shinzo Koyama

Seiji Yamahira

Shigeru Saitou

Masato Takemoto

Shota Yamada

A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

Photo sensor and distance measuring system using said photo sensor

A solid-state image sensor includes at least two or more APDs formed on a substrate. First regions are arranged outside the APDs as viewed in plane. Adjacent ones of the APDs and the first regions are separated from each other through a separation region. A first voltage Vis applied to a fourth semiconductor layer of the APD, and a second voltage Vis applied to a fifth semiconductor layer of the first region. The first voltage Vis higher than the second voltage V

Photodetector comprising avalanche photodiodes and first region surrounding avalanche photodiodes

A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

Light detector

A photosensor includes: APD regions and a dividing region located between adjacent APD regions. The first semiconductor substrate includes a first primary surface and a second primary surface. An APD in each APD region includes: a first semiconductor layer of a first conductivity type that is in contact with the first primary surface; and a second semiconductor layer of a second conductivity type opposite to the first conductivity type which is closer to the second primary surface than the first semiconductor layer is. The dividing region includes: a third semiconductor layer and a trench closer to the second primary surface than the third semiconductor layer is. The trench includes a first end in contact with the second primary surface and a second end apart from the first primary surface. A part of the trench between the second end and the first primary surface is at least partially depleted.

Photosensor and distance measurement system

A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Photodetector

An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

Imaging device for reducing variations of amounts of electric charges accumulated in floating diffusion regions

A photodetector includes a first APD that is sensitive to incident light and a second APD through which a constant current flows regardless of the incident light. One terminal of the first APD is electrically connected to one terminal of the second APD, another terminal of the first APD and another terminal of the second APD are connected to different power supplies, respectively, and the one terminal of the first APD and the one terminal of the second APD are both anodes or cathodes.

A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.

A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

A photodetector includes: at least one avalanche photodiode including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.

Photodetector, photodetector array, and drive method comprising a second transistor including a channel of first conductivity type and a first transistor including a channel of second conductivity type that has polarity opposite to polarity of the first conductivity type

The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.

Photosensor, image sensor, and photosensor driving method

A distance measuring device includes a controller and a distance calculator. The controller sets, in a first time period, a first measurement time range corresponding to a first measurement distance range; causes a light emitter to emit light and places a light receiver into an exposure state, in the first measurement time range; sets, in a second time period, a second measurement time range corresponding to a second measurement distance range; and causes the light emitter to emit light and places the light receiver into an exposure state, in the second measurement time range. At least one measurement condition is different between the first and second time periods. The distance calculator calculates the distance from the distance measuring device to a measurement target, based on the time from the emission to the reflection of light. The time is in at least one of the first and second time periods.

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Osaka, Japan

Akito Inoue