Fujitsu Corporation

Fujitsu Semiconductor Limited

Sharp Kabushiki Kaisha Corporation

Akito Hara

Nobuo Sasaki

Kuninori Kitahara

Satoshi Murakami

Michiko Takei

Fumiyo Takeuchi

Kenichi Yoshino

Masaaki Koizuka

Yasuyoshi Mishima

Katsuyuki Suga

Yasuyuki Sano

A semiconductor device includes a field effect transistor and a strain generating layer to apply a stress to a channel region of the field effect transistor. The strain generating layer contains at least one of oxygen and nitrogen of 1.0&#xd7;10cmto 5.0&#xd7;10cm, or alternatively, the strain generating layer contains self-interstitial atoms and/or vacancies of 1.0&#xd7;10cmto 5.0&#xd7;10cm. In the latter case, at least a portion of the self-interstitial atoms and/or the vacancies exist as a cluster.

Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device, including the steps of: forming a shielding filmon a first insulating film; sequentially forming a second insulating filmand an amorphous semiconductor filmon the shielding film; melting the amorphous semiconductor filmat least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film, and converting the amorphous semiconductor filminto a polycrystalline semiconductor film; sequentially forming a gate insulating filmand a gate electrodeon the polycrystalline semiconductor filmon the channels; and forming source and drain regionsin the polycrystalline semiconductor filmon sides of the gate electrode, and forming a TFTby use of the source and drain regions, the gate insulating film, and the gate electrode

Semiconductor device

A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate, and the step of flowing a heated gas to the semiconductor thin film while an energy beamis being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Semiconductor thin film forming method and semiconductor device

A TFT capable of showing a large gm (large ON-current) and having characteristics comparable to those of Si-MOSFET despite of its relatively simple configuration was fabricated by the steps of coating, for example, a positive photo-resist on an Mo film; subjecting the photo-resist to back light exposure from the glass-substrate side under masking with a bottom gate electrode, to thereby form a resist pattern having the same geometry and being aligned with the bottom gate electrode because exposure light is intercepted by the bottom gate electrode but can travel through the Mo film; and etching the Mo film under masking by the resist pattern to thereby form a top gate electrode in conformity with the geometry of the resist pattern in a self-aligned manner.

Semiconductor device and method of fabricating the same

An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.

Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than &plusmn;1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.

An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.

Method of Production of a thin film type semiconductor device having a heat-retaining layer

Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus

There is provided the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film formed into an island or ribbon-like shape on a substrate. If a width of a rectangle in which the amorphous silicon film is inscribed is 30 &mgr;m or less, any one condition of (1) a top end shape of a pattern is a convex shape, (2) a top end shape is a concave shape and consists of straight lines and has three corner portions at a top end side, and both angles of the corner portions on both sides of the top end shape are set to 45 degree or more, (3) a top end shape is a concave shape and consists of curved lines, and (4) a width of a top end portion is 25 &mgr;m or less, is satisfied.

Polysilicon film forming method

A first layer made of polysilicon is formed on the surface of an underlying substrate. The surface of the first layer is exposed to an environment which etches silicon oxide. If the surface of the first layer is covered with a silicon oxide film, the silicon oxide film is removed. An energy is supplied to the first layer, the energy allowing silicon crystal to re-grow. Solid phase growth of silicon occurs in the first layer to planarize the surface thereof. A polysilicon film having small root mean square of roughness can be formed.

Method of manufacturing semiconductor device with polysilicon film

A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate , and the step of flowing a heated gas to the semiconductor thin film while an energy beam is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Polycrystal thin film forming method and forming system

A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Semiconductor thin film forming method

A method of manufacturing a semiconductor device having a polycrystalline semiconductor layer includes the steps of: preparing a base substrate; forming a first semiconductor layer on a surface of the base substrate; forming a first polycrystalline semiconductor layer by applying an energy beam to the first semiconductor layer; etching a surface layer of the first polycrystalline semiconductor layer; and after the etching process, forming a second semiconductor layer on a surface of the first polycrystalline semiconductor layer without exposing the surface of the first polycrystalline semiconductor layer to an atmospheric air. The final polycrystalline semiconductor layer has a high film quality.

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Kawasaki, Japan

Akito Hara