Tokyo Electron Limited

Entegris, Inc.

Sinfonia Technology Co., Ltd.

Akitake Tamura

Kaoru Fujihara

Teruyuki Hayashi

Kazuhide Hasebe

Takehiko Fujita

Mitsuhiro Okada

Keisuke Suzuki

Masaki Kurokawa

Shigeru Nakajima

Akinobu Kakimoto

Shigenori Ozaki

Kazuya Dobashi

Gregory W Bores

Misako Saito

Yoshikazu Furusawa

Katsuhiko Komori

Satoshi Oka

Yoshio Kinoshita

Norifumi Kimura

Hisashi Gomi

Tetsushi Ozaki

Toshimitsu Fuji

Haruki Takeuchi

There is provided a cyclone collector which can securely collect particles from an intake gas and can prevent discharge of a water mist. The cyclone collectorincludes a container, a liquid-film forming sectionfor forming a liquid filmin the container, a gas inletprovided in a lid, and an exhaust pipe. The gas inletextends downward at an angle with an orthogonal planeB perpendicular to the axisA of the container. The openingof the gas inletopens in an area at a distance from the liquid film. An intake gas is ejected from the gas inlettoward the liquid film

Cyclone collector

Provided is a measurement device, including: a droplet forming part configured to form aerosol-like liquid droplets from a liquid in which a fluorescent substance specifically bondable to detection target particles and a specimen are mixed with each other; a droplet sorting part configured to sort droplets having a diameter smaller than a predetermined value from the droplets formed by the droplet forming part; and a measurement part configured to irradiate light onto the droplets sorted by the droplet sorting part and configured to measure the fluorescence intensity of the droplets.

Measurement device and measurement method

A measurement device includes: a capturing part for causing a liquid to capture detection target particles contained in a gas and causing a fluorescent substance specifically bondable to the detection target particles to be bonded to the detection target particles; a droplet forming part for forming aerosol-like droplets from the liquid; and a measurement part for irradiating light onto the droplets and measuring the fluorescence intensity of the droplets. The capturing part includes a cyclone which swirls the gas introduced from a gas introduction part in a circumferential direction, separates the detection target particles toward a wall surface of the cyclone body under a centrifugal force, introduces the liquid from the liquid introduction part, causes the liquid to capture the detection target particles separated toward the wall surface and continuously supplies the liquid to the droplet forming part.

A particulate measurement device includes: a nozzle which discharges liquid from an opening to form a flow of the liquid; a light emitter which emits light such that the light propagates in a region where the flow of the liquid is formed; a photodetector provided outside the region to receive the light from a partial region extending along a longitudinal direction of the region; and an air flow forming unit which forms a flow of gas along a direction in which the liquid flows, on an outer periphery of the region.

Particulate measurement device

Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

Substrate processing apparatus and particle adhesion preventing method

A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Virus detection device and virus detection method

In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

Method and device for cleaning a substrate and storage medium

A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

Pattern forming method, semiconductor device manufacturing apparatus and storage medium

A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Vertical CVD apparatus for forming silicon-germanium film

A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

Film formation apparatus and method of using the same

The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

Particle measuring method and particle measuring apparatus

A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.

Heat-processing method for semiconductor process under a vacuum pressure

A silicon epitaxial layer is formed on the semiconductor underlayer of a target substrate (W) in the process chamber (). This forming method includes a pressure reducing step of reducing the pressure inside the process chamber () accommodating the target substrate (W), a vapor phase growth step of introducing a film formation gas containing silane gas into the process chamber () to grow a silicon epitaxial layer on the semiconductor underlayer, and a hydrogen chloride treatment step and a hydrogen heat treatment step performed therebetween. The hydrogen chloride treatment step is arranged to introduce the first pre-treatment gas containing hydrogen chloride gas into the process chamber (), thereby treating the atmosphere inside the process chamber (). The hydrogen heat treatment step is arranged to introduce the second pre-treatment gas containing hydrogen gas into the process chamber (), thereby treating the surface of the semiconductor underlayer.

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Tokyo, Japan

Akitake Tamura