Nec Corporation

Sony Mobile Communications Inc.

Sony Corporation

Sony Group Corporation

Akitaka Kimura

Masaaki Nido

Chiaki Sasaoka

Akira Suzuki

Takashi Hasegawa

Atsushi Yamaguchi

Haruo Sunakawa

Hiroyuki Kawakami

Kenji Yokoyama

Takashi Kawakami

Masahiko Naito

Brian Bellamy Johnson

Yoshimitsu Funabashi

George A Arriola

Hiroaki Adachi

Takahiro Kawaguchi

Akihisa Tomita

Keishi Tsuchiya

Daichi Yagi

Jorge Furuya

Seigo Iwasaki

Kenta Ohmori

Kichiro Kurozumi

Ryo Yabe

Yuumi Ozawa

Kazuhisa Fukuda

Risa Takahashi

Koichi Izumi

Xiaoyu Ruan

Takashi Hemmi

Brian Johnson

Usability improvement is achievable with respect to use of screen divisional display of windows of plural applications. Provided is an information processing apparatus including a control unit that displays divisional display information on a display screen as information associated with screen divisional display of windows of plural applications on the display screen, on the basis of a trigger operation, and displays the windows of the plural selected applications on the basis of a following operation for the displayed divisional display information while dividing display of the windows into at least a first region and a second region of the display screen. The following operation includes an operation that selects the applications for which the screen divisional display is to be executed.

Information processing apparatus and information processing method for dividing display screen for display of plurality of applications

An information terminal enables a user to simply and easily confirm a plurality of pieces of update information handled by a plurality of various application programs without any troublesome operation. An information storage stores a plurality of different types of information. An update information storage stores a part of information updated in the information storages as update information associated with the respective types. An update information manager monitors an information update in the information storages and stores, when an information update is made in the information storages, the part of the updated information in the update information storage as update information associated with the respective types. Further, an information selector extracts the update information stored in the update information storage in time series and outputs them to display them on a screen.

Information terminal, information presentation method for an information terminal, and information presentation program

To make it possible to significantly reduce a burden on a user at a time of a classification of image files added or updated, for example, and thus facilitate association with other content data. An image detector/register () detects an image file that is unregistered or updated, and structures and manages a list of the image files. A face rectangular detector () detects a face rectangle in the image files detected, associates information on the face rectangle with the image file, and stores the information. A similar face classification section () calculates an amount of feature of the face rectangle, compares the amount of feature calculated with amounts of feature of different face rectangles already calculated and classified into groups, calculates a similarity between the face rectangle and the face rectangles of the different face rectangles in the respective groups, and classifies and manages the face rectangles in accordance with a result of the similarity calculation. A similar face display section () displays at least one image file including the face rectangle classified into the same group on a display screen.

Information terminal, information control method for an information terminal, and information control program

The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layerhas a superlattice structure composed of GaN layers and AlGaN layers, which are alternately layered on each other. The p type cladding layerhas a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region, whereas the dislocation density is relatively high in a region directly above a current-confining region

Group III nitride semiconductor optical device

In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

Semiconductor layer formed by selective deposition and method for depositing semiconductor layer

Oxygen is doped in a quantum well active layer. First, an n-type InGaN barrier layerof 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, Oat 20 sccm, and NHat 10 slm, on the n-type GaN optical guide layer. Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped InGaN well layerof 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type InGaN barrier layer. A p-type AlGaN cap layerwhose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp)Mg at 5 sccm and NHat 10 slm, on a multi-quantum well structure active layerformed in this way.

Method of manufacturing a light emitting device with a doped active layer

A semiconductor device and method of forming a current block layer structure includes the steps of providing dielectric stripe masks defining at least a stripe-shaped opening on a surface of a compound semiconductor region having a hexagonal crystal structure, and selectively growing at least a current block layer of a compound semiconductor having the hexagonal crystal structure on the surface of the compound semiconductor region by use of the dielectric stripe masks.

Gallium nitride based compound semiconductor laser and method of forming the same

A process for producing a semiconductor light-emitting device, which comprises forming, on a substrate by crystal growth, a gallium nitride type compound semiconductor layer having a crystal face (0,0,0,1) which can be utilized as the end surface of an optical waveguide or as a cavity mirror surface.

Fabrication of nitride semiconductor light-emitting device

A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600.degree. C. to 700.degree. C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.

Method of crystal growth of a GaN layer over a GaAs substrate

In a method of manufacturing a semiconductor device which includes a quartz substrate having a z-cut plane of (0001) plane on a surface, a GaN film is first deposited on the surface. Finally, the quartz substrate is removed from the GaN film. The removed GaN film is used as a real substrate for forming GaN based compound semiconductor layers thereon.

Growth of GaN layers on quartz substrates

In accordance with the first present invention, a cladding layer is provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride. The cladding layer includes at least one Al.sub.x Ga.sub.1-x N layer. An averaged value of the index 'x' of aluminum of the above at least one Al.sub.x Ga.sub.1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of the above at least one Al.sub.x Ga.sub.1-x N layer is not less than 0.7 micrometers as well as the cladding layer has an averaged refractive index which is lower than the refractive index of gallium nitride.

Gallium nitride based semiconductor laser with an improved aluminum

A magnesium-doped semiconductor layer expressed by general formula Al.sub.x Ga.sub.1-x N (where 0.ltoreq.x.ltoreq.1) is formed on a substrate. Thereafter, on the semiconductor layer, a plurality of semiconductor layers (including an activation layer) expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) are formed. The crystalline characteristics of semiconductor layers including a light emitting layer of a gallium nitride semiconductor light emitting device having a magnesium-doped gallium nitride semiconductor layer are good. Thus, in the case that the light emitting device is a laser device, it can be expected that the oscillating threshold value of the laser device becomes low. In the case that the light emitting device is a light emitting diode, it can be expected that the light emitting efficiency of the light emitting diode becomes high.

Growing community of inventors

Tokyo, Japan

Akitaka Kimura