Ricoh Company, Ltd.

Ricoh Research Institute of General Electronics

Tianma Micro-Electronics Co., Ltd.

Akishige Murakami

Satoshi Yamamoto

Tohru Yashiro

Yoshinori Okada

Shigenobu Hirano

Yoshihisa Naijo

Koh Fujimura

Hiroshi Miura

Yoshikazu Akiyama

Masafumi Kumano

Takumi Yamaga

Koichi Haga

Kenji Yamamoto

Naoyuki Ueda

Hidenori Tomono

Ikue Kawashima

Hitoshi Arita

Kazuaki Tsuji

Sukchan Kim

Masahiro Masuzawa

Takanori Tano

Mayuka Araumi

Makito Nakashima

Kohji Matsuoka

Kouichi Haga

An electro-chromic display element includes a display electrodeprovided on a display substratean electro-chromic layerprovided on the display electrode; multiple opposing electrodeswhich are provided on an opposing substrateand which are arranged to oppose the display electrode; an electrolytic layerprovided between the display electrodeand the multiple opposing electrodes; and an erasing electrodeplaced between the display electrodeand the multiple opposing electrodesand which is arranged such that the electro-chromic layeris placed between the third electrode and the display electrode

Electro-chromic display element, display apparatus, and driving method

An electrochromic display device includes a display substrate, a counter substrate facing the display substrate, counter electrodes arranged on the counter substrate, an electrolyte layer arranged between the display substrate and the counter electrodes, display electrodes separately arranged from one another between the display substrate and the counter electrodes, electrochromic layers to develop or reduce a color by redox reactions, the electrochromic layers being formed on the respective display electrodes arranged such that the electrochromic layers face the set of the counter electrodes, a voltage applying unit to select one of the display electrodes to connect the selected display electrode and the counter electrodes to apply a voltage between the connected display electrode and counter electrodes, a disconnecting unit to disconnect the unselected display electrodes from the counter electrodes, and an interelectrode connecting unit to connect the display electrodes.

Controllable electrochromic display device

A disclosed electrochromic display element includes a display substrate, a counter substrate facing the display substrate, display electrodes arranged between the display substrate and the counter substrate, electrochromic layers formed on the respective display electrodes, a plurality of drive elements arranged on the counter substrate at predetermined intervals, a plurality of pixel electrodes arranged on the drive elements, a charge retention layer formed over the pixel electrodes as a continuous layer, the charge retention layer being formed of a mixed film including a polymer and one of electric conductive microparticles and semiconductor microparticles, and an electrolyte layer sandwitched between the display substrate and the charge retention layer.

Electrochromic display element, display device and information apparatus

An electrochromic display apparatus is disclosed that includes a stacked body which includes a display electrode and an electrochromic layer that are stacked on each other; a film which includes through holes, and is disposed on one of the display electrode and the electrochromic layer of the stacked body; and an opposed substrate on which an opposed electrode that faces toward the display electrode is formed.

Electrochromic display apparatus and method of manufacturing the same

A display device includes a substrate; a matrix of scan lines and signal lines formed on the substrate; switching elements formed in pixel areas defined by the scan lines and the signal lines crossing each other; a first insulating film formed over the scan lines, the signal lines, and the switching elements; and display elements to be driven by the switching elements. The pixel areas are located in a display area and the first insulating film has openings above the scan lines or the signal lines in an outer area outside of the display area.

Display device and method of repairing display device

An ion conductor includes a mixture including an electrolyte including a salt including inorganic or organic pairs of negative and positive ions, and a low-molecular liquid crystal material. Further, an impedance of the ion conductor varies in accordance with an increase of a voltage applied to the ion conductor due to an orientation response of the low-molecular liquid crystal material, the impedance being determined by an AC impedance method.

Ion conductor and electrochromic display device

Disclosed is a screen plate for printing two-dimensionally arranged opening patterns by screen printing. The screen plate includes a dummy printing region in which a predetermined pattern is singly or plurally arranged along an edge part of one side or edge parts of two sides parallel to a printing direction of the screen plate; a full-surface printing region for performing full-surface printing, the full-surface printing region being formed into a belt shape at a position closer to a central side of the screen plate than the dummy printing region; and a printing region that is formed at a position closer to the central side than the full-surface printing region and in which the opening patterns are two-dimensionally arranged.

Screen plate including dummy printing region and full surface solid printing region

A display apparatus is disclosed. The display apparatus includes a transistor formed on a substrate; an interlayer insulator formed on the transistor; a pixel electrode formed on the interlayer insulator; a first partition located above a contact hole which penetrates the interlayer insulator; and a second partition which intersects with the first partition, or which is located on a straight line intersecting with the first partition, and which brings a width value of the pixel electrode to a predetermined value.

Display apparatus, manufacturing method thereof, and electronic equipment

A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

Organic transistor active substrate, manufacturing method thereof, and electrophoretic display

A method of manufacturing a multilayer wiring structure is disclosed. The method comprises a step of forming a via post on a first metal wiring element, a step of printing an interlayer insulation film on the first metal wiring element, with use of a screen mask having a non-ejection area slightly larger than a head of the via post, such that the interlayer insulation film has an upper surface at the level lower than the head of the via post, while generally aligning the non-ejection area with the head of the via post, a step of curing the interlayer insulation film, and a step of forming a second metal wiring element in contact with the via post on the interlayer insulation film such that the first metal wiring element and the second metal wiring element are connected through the via post.

Multilayer wiring structure and method of manufacturing the same

The present invention aims at improving the lifetime of the wiring connecting to the hole nearest to the bonding pad and thereby improving the reliability of the semiconductor device. The invention relates to such semiconductor device and method of manufacturing the semiconductor device. The semiconductor device includes a plurality of first metal layers connected to a bonding pad, and plurality of aluminum wirings respectively connected to the first metal layers. The plurality of aluminum wirings are connected to a single second metal layer and have a length equal to or short than Blech Length.

Semiconductor device and manufacturing method thereof

A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.

Amorphous silicon photoelectric device

An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon photoelectric conversion layer, wherein the substrate is transparent to the incident light for photosensing, the lower electrode and the upper electrode comprises at least one of an electroconductive oxide or an electroconductive nitride, both of the electrodes for receiving the incident light for photosensing being transparent to the incident light, and the amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers, and at least one of the amorphous silicon layers in contact with the electroconductive oxide or the electroconductive nitride comprises at least one of the same atoms as the constituent atoms of the electroconductive oxide or the electroconductive nitride.

Amorphous silicon photosensor

An amorphous silicon photosensor is disclosed, which comprises a photoconductive layer which comprises three or four amorphous silicon layers formed on a substrate, each layer containing at least one kind of atom selected from the group consisting of hydrogen, heavy hydrogen, and halogen atoms, and having two heterojunctions, in which the optical band gap of an amorphous silicon layer lying between the two heterojunctions is in the range of 1.6 to 1.8 eV, a first end amorphous silicon layer, to which light is applied, contains oxygen, has an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or p-type conductivity, and a second end amorphous silicon layer, to which light is not applied, contains oxygen, having an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or n-type conductivity.

Growing community of inventors

Kanagawa, Japan

Akishige Murakami