Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Akira Yotsumoto

Kenichi Fujii

Kotaro Noda

Hidenobu Nagashima

Fumie Kikushima

Takaya Yamanaka

Minoru Oda

Ming Hu

Daina Inoue

A storage device including a transistor portion including a transistor, a plurality of interlayer insulating films provided above the transistor portion, a plurality of first conductive layers provided respectively between the plurality of interlayer insulating films, and a second conductive layer extending through the plurality of interlayer insulating films and the plurality of first conductive layers, the second conductive layer having one end electrically connected to the transistor portion, and a part that extends beyond a portion of the transistor portion.

Storage device

A semiconductor device includes a semiconductor substrate, an interlayer insulating film on the semiconductor substrate and having a first hole extending therethrough, and a contact portion in the first hole of the interlayer insulating film. The contact portion includes a first silicon film along an inner surface of the first hole of the interlayer insulating film.

Semiconductor device

A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate. A laminate of silicon oxide film and a silicon nitride film are located above the upper surface of the isolation film and below the upper surface of the substrate.

Nonvolatile semiconductor storage device and method of manufacturing the same

A semiconductor storage device includes an interlayer insulating film provided between select gate electrodes, a first fill material extending along upper portions of memory cell gate electrodes so as to cover air gaps residing between the memory cell gate electrodes, the first fill material extending along sidewalls of the select gate electrodes and sidewalls of the interlayer insulating film so as to define a recess above the first fill material extending along the sidewalls of the select gate electrodes and the sidewalls of the interlayer insulating film, a second fill material filling the recess above the first fill material, and a plurality of contacts formed through the interlayer insulating film, the contacts physically contacting each of device areas formed in a semiconductor substrate.

Growing community of inventors

Yokkaichi Mie, Japan

Akira Yotsumoto