Kabushiki Kaisha Toshiba

Toshiba Chemical Corporation

Other

Tokyo Shibaura Denki Kabushiki Kaisha

Akira Yoshizumi

Shinetsu Fujieda

Ken Uchida

Yoshihiko Nakano

Hiroshi Shimozawa

Naoko Kihara

Shuzi Hayase

Michiya Higashi

Kazutaka Matsumoto

Shinji Murai

Hideo Ohta

Yukihiro Mikogami

Sadao Kajiura

Hisayuki Hirai

Kazuhiro Sawai

Tsutomu Nagata

Shinji Murakami

Shigeyuki Kouchiyama

Koji Asakawa

Naomi Shida

Toshiro Hiraoka

Toru Ushirogouchi

Shuji Hayase

Makoto Nakase

Moriyasu Wada

Tetsuo Okuyama

Takuya Naito

Seizaburo Shimizu

Osamu Sasaki

Rikako Kani

Hirotoshi Ikeya

Antonino Scandurra

Koshi Hanyu

Yuichi Tenya

Salvatore Pignataro

Roberto Zafarana

A polymeric composition for making semiconductor device packaging includes at least one epoxy resin, at least one curing agent in an amount between 30 and 110 parts by weight per 100 parts by weight of the epoxy resin, at least one silica-based reinforcing filler in an amount between 300 and 2300 parts by weight per 100 parts of the epoxy resin, and at least one control agent for a rheology of the polymeric composition. The at least one control agent may be substantially free from polar groups and present in an amount between 0.1 and 50 parts by weight per 100 parts by weight of the epoxy resin. The invention also relates to a plastic packaging material for microelectronic applications which may be obtained from the above polymeric composition, and to a semiconductor electronic device including such packaging material.

Polymeric composition for packaging a semiconductor electronic device and packaging obtained therefrom

A transparent conductive substrate, that has excellent heat resistant characteristic, shock resisting characteristic, chemical resisting characteristic, oxygen barrier characteristic, steam barrier characteristic, and scratch resisting characteristic while the substrate is easy to handle and has a thin, and light-weight structure, is provided. A display apparatus having such a transparent conductive substrate is also provided. The transparent conductive substrate comprises a transparent composite base having a transparent heat resisting resin base and a metallic oxide layer or a metallic nitride layer, the metallic oxide layer or the metallic nitride layer being formed on at least one of two main surface of the transparent heat resisting resin base, and a transparent electrode layer formed on the metallic oxide layer or the metallic nitride layer of the transparent composite base, wherein a coupling agent is coated on the metallic oxide layer or the metallic nitride layer of the transparent composite base, and wherein the metallic oxide layer or the metallic nitride layer has an exposed surface. In addition, a resin base mainly composed of thermosetting type allyated polyarylene ether is used.

Transparent conductive substrate and display apparatus

There is disclosed a color developing resin composition comprising a base polymer, a dialdehyde represented by the general formula OHC--R.sup.1' --CHO, a diamine represented by the general formula H.sub.2 N--R.sup.2' --NH.sub.2 (at least one of R.sup.1' and R.sup.2' is an aromatic group), a compound which produces an acid by light irradiating and a resin which is crosslinked with the acid.

Color developing organic material, color developing resin composition

A method of manufacturing a castable epoxy resin composition which comprises as components an epoxy resin, an acid anhydride in an amount sufficient for hardening, an inorganic filler, and acrylic rubber particles having a thermoplastic resin skin, said thermoplastic resin skin being 1 to 50 wt % of said acrylic rubber particles, wherein each of said acrylic rubber particles has epoxy groups on a surface thereof, and said acrylic rubber particles are present in an amount ranging between 2 and 40 parts by weight based on 100 parts by weight of said epoxy resin, wherein said inorganic filler is an alumina powder having a mean particle size by volume of 6 to 16 .mu.m, and a particle size of at least 10 volume % of said alumina powder particles is 20 .mu.m or greater, and wherein at least 90 volume % of said rubber particles are dispersed as discrete particles with a particle size by volume of 1 .mu.m or less, said method comprising the steps of:

Method of manufacturing a castable epoxy resin composition comprising

A semiconductor chip is positioned between encapsulating sheets. The encapsulating sheets each have a surface that is highly adhesive and a surface that is less adhesive. The surface of the encapsulating sheet that is highly adhesive contacts the chip. The surface that is less adhesive contacts a mold. Subsequently, encapsulation is carried out by molding. A soldering resistance can be improved without reducing a mold releasing property.

Plastic-encapsulated semiconductor device

A thermosetting resin composition, containing (A) a thermosetting resin; (B) a curing agent for the thermosetting resin; (C) a polysilane copolymer; and (D) an inorganic filler; wherein the polyailane copolymer (C) is added in amount of about 0.1 to 10% by weight based on the total amount of the resin composition.

Thermosetting resin composition

A thermosetting resin composition containing a silane compound a) having at least one phenolic hydroxyl group, and an organic compound b) having at least two functional groups capable of reaction with the phenolic hydroxyl group of the silane compound, wherein the silane compound a) is added in an amount of more than 10 parts by weight relative to 100 parts by weight of the organic compound b).

Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.

Polysilane monomolecular film and polysilane built-up film

Disclosed is a polysilane having a repeating unit represented by general formula (1) given below. Also disclosed is a polysilane composition, comprising a polysilane having a repeating unit represented by general formula (2) given below and a cross linking agent: ##STR1## where, each of R.sup.1 and R.sup.3 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms; R.sup.2 is a divalent hydrocarbon group having to 24 carbon atoms which can be substituted; R.sup.4 is a covalent bond, or a substituted or unsubstituted alkylene group having 1 to carbon atoms, or a substituted or unsubstituted arylene group having 6 to 24 carbon atoms; each of R.sup.5 to R.sup.9 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, or hydroxyl group, at least one of R.sup.5 to R.sup.9 being hydroxyl group; and X is a monovalent organic group having a reactive group capable of crosslinking upon exposure to light or by heating. If any of the polysilane and the polysilane composition of the present invention is exposed to light or heated, the polysilane molecules are crosslinked so as to provide a two or three dimensional polymer.

Polysilane and polysilane composition

There is disclosed a method for manufacturing a printed circuit board in which fine copper circuit patterns are transferred onto a thermoplastic resin, without producing a large amount of waste liquors in which copper is dissolved unlike in a subtract method. The method for manufacturing a printed circuit board includes the steps of manufacturing a printed circuit original plate having protruding patterns which have the same shape as circuit patterns to be formed and a height at least the same as the thickness of a copper foil used and each of which is constituted by a flat or projecting curved surface to be brought into contact with the copper foil and side surfaces different from the flat or projecting curved surface, and heating under pressure the protruding patterns of the original plate against a thermoplastic resin with the copper foil interposed therebetween to transfer portions of the copper foil in contact with the protruding patterns onto the surface of the thermoplastic resin, thereby forming the circuit patterns.

Method for manufacturing printed circuit board

The device characteristics is in containing a maleimide resin with a content of 0.2 weight percent of less of an organic acid, a phenolic resin, and a combination of a basic catalyst and a peroxide as a curing catalyst. In addition, additives as a mold release agent such as a polyethylene wax and an inorganic filler are contained. The maleimide resin composition is prepared in such a manner that a part of the phenolic resin is preblended with the curing catalyst in advance of other components, while the remainder of the phenolic resin is added to the maleimide resin to prepolymerize, and then, the preblend and the prepolyer are blended the other components. The maleimide resin composition has excellent moldability by improvement of curing characteristics through combined use of a basic catalyst and a peroxide as a curing agent. Besides, a resin encapsulated semiconductor device manufactured by encapsulating a semiconductor element with the resin composition has excellent heat resistance and moisture-resistance reliability.

Maleimide resin composition and resin encapsulated semiconductor device

A semiconductor device encapsulant contains (a) a thermosetting resin for providing a cured product having a glass transition temperature of not less than 190.degree. C., (b) a filler consisting of a fused silica, (c) a modifier consisting of an MBS or ABS, (d) a modifier consisting of a silicone rubber or a silicone gel, and (e) a lubricant containing a metal chelate compound.

Semiconductor device encapsulant

The molding resin composition of this invention comprises a resin contained a releasing a agents formulated with a release agent and a metal chelate compound. This resin composition is improved an good adhesivity, high moisture resistivity and a good moldability.

Molding resin composition and molded electronic component

A rubber-modified phenolic resin composition contains a novolak-type phenolic resin in which at least one modifying agent selected from the group consisting of an ABS resin and an MBS resin is homogeneously dispersed. The composition has good impact resistance and thermal shock resistance. The composition is prepared by adding at least one modifying agent described above to a novolak-type phenolic resin which is heated and melted at its softening point or more, so that the modifying agent is homogeneous dispersed in the resin. The resin composition is suitably used as a curing agent for an epoxy resin encapsulant for sealing electronic devices.

Rubber-modified phenolic resin composition and method of manufacturing

An epoxy resin composition useful for sealing a semiconductor device includes 100 parts by weight of epoxy resin, 30-75 parts by weight of phenolic resin, 320-570 parts by weight of silica powder, and 2-30 parts by weight of styrene-butadiene-methyl methacrylate copolymer. The surface of the silica powder is treated, at room temperature, by 0.05-1.00% by weight of silane coupling agent, 0.05-1.00% by weight of a silicone base surface active agent, and 0.15-3.00% by weight of thermosetting silicone rubber.

Growing community of inventors

Yokohama, Japan

Akira Yoshizumi