Sony Corporation

Sony Disc Technology, Inc.

Akira Yoshio

Shuzo Sato

Yuji Segawa

Takeshi Nogami

Naoki Komai

Hiizu Ootorii

Masao Ishihara

Zenya Yasuda

Yoshinori Ito

Shingo Kadomura

Takaaki Miyamoto

Katsumi Watanabe

Masatoshi Suzuki

Mitsuru Taguchi

Emi Sugimoto

A method for producing a semiconductor device, polishing method, and polishing apparatus, suppressing occurrence of dishing and erosion in a flattening process by polishing of a metal film for constituting an interconnection of a semiconductor device having a multilayer interconnection structure. The production method includes the steps of: forming a passivation film exhibiting an action of inhibiting an electrolytic reaction of a metal at the surface of the metal film; selectively removing the passivation film on a projecting portion so as to expose the projecting portion of the metal film at the surface; removing the exposed projecting portion of the metal film by electrolytic polishing so as to flatten unevenness of the surface of the metal film; and removing the metal film present on an insulation film from the metal film with the flattened surface by electrolytic composite polishing combining electrolytic polishing and mechanical polishing so as to form an interconnection.

Method for producing semiconductor device, polishing apparatus, and polishing method

A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.

Methods of producing and polishing semiconductor device and polishing apparatus

A polishing method able to easily flatten unevenness formed on the surface of a film to be polished and able to efficiently polish the film flat while suppressing damage to an interlayer insulating film below the film, comprising, when polishing an object having a film such as an interconnection layer formed burying interconnection grooves formed in an insulating film of a substrate, supplying a polishing solution over the surface to be polished at least substantially parallel to the surface to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the processing solution or arranging a cathode member facing the surface and supplying an electrolytic solution containing a chelating agent between the surface and cathode member while supplying voltage between the film and the cathode member to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the electrolytic solution, and a polishing apparatus using the same.

Polishing method and polishing apparatus

A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface. Further, plating is performed by a reverse reaction of the above.

Electrolytic polishing method

Method for producing semiconductor device polishing apparatus, and polishing method

A method of electroless plating for processing a plating surface to form a barrier layer being capable of uniformly forming a barrier layer and reducing the consumption of a processing solution, comprising a step of feeding a processing solution used in at least one of the pre-processing steps of the electroless plating and the electroless plating step to the plating surface for puddling treatment, or, using a processing solution at least containing, with respect to one mole of a first metallic material supplying a main ingredient of the barrier layer, three or more moles of a completing agent and three or more moles of reducing agent and having a pH value adjusted to 9 or more and stored in an atmosphere of an inert gas or ammonia gas, and a corresponding electroless plating apparatus.

Method of electroless plating and electroless plating apparatus

There is a method and apparatus for plating in which electroless copper plating is performed in a contact hole and an interconnect trench on a minute scale of a semiconductor integrated circuit device, and a plating structure. Organic material originated from an organic gas carried over from the preceding step is removed from the inner surface of a blind hole, thereafter the surface of the barrier layer is subjected to predetermined pretreatments comprising a hydroxylation treatment, a coupling treatment, a Pd colloidal solution treatment and the like, and following the pretreatments, electroless plating with copper is effected desirably under influence of ultrasonic waves. Hence, a uniform, good quality plating layer is formed inside and outside the hole and a CMP processing following the plating is performed with ease.

Method and apparatus for plating, and plating structure

When a barrier layer formed on a surface of a contact hole is subjected to electroless plating of copper, a salt of a metal such as gold, nickel, palladium, cobalt or platinum is added as a plating accelerator in an amount of 1 mol % or less based on a copper salt in a composition of an electroless plating solution, whereby the metal having the higher catalytic activity than copper is precipitated before precipitation of copper, and copper can then be precipitated as a good-quality plated film.

Electroless plating method and electroless plating solution

In a related interconnection structure that is formed by filling a metal, there have been problems, since defective connection occurs due to generation of voids and other features caused by poor filling of the metal, which entails reduction in reliability, and contact resistance is large due to a barrier metal layer at a contact portion. A novel interconnection structure is provided which comprises: a recess (for example, a contact hole, a trench, or a trench and a contact hole formed at a bottom of the trench), which is connected onto a conductive material mass formed in an insulating film, and which is formed in the insulating film; a barrier metal layer formed on side walls of the recess; and metal material masses filled in the interior of the recess, wherein the metal material masses are formed with a metal repeatedly filled into the recess over a plurality of times, and a metal material mass and a conductive material mass are directly connected to each other.

Interconnection structure and fabrication process therefor

A liquid supplying apparatus for supplying treatment liquid to a treatment liquid ejecting unit which ejects treatment liquid to a work, which is capable of supplying high quality treatment liquid without wasting treatment liquid. Since a fixed quantity of treatment liquid is ejected from the treatment liquid ejecting unit during the process waiting time and this treatment liquid is ejected through a cup sealed airtight to a liquid tank and circulated, the liquid supplying apparatus capable of supplying high quality treatment liquid can be realized without wasting treatment liquid.

Liquid supplying apparatus

A spin coating device for a substrate, in which a uniform thin film can be formed by applying an application liquid to a substrate and the quality of the substrate can be further improved. The spin coating device for a substrate comprises a turntable 2 for holding and rotating a substrate 1; an application liquid supply means 4 for supplying an application liquid 3 to the rotating substrate 1: splash preventing means 20, which are arranged at the periphery of the substrate 1 held by the turntable 2, prevent the droplets of the application liquid from splashing and provide with an opening portion 10 for circulating the flow A of external air in an area ranging from the central portion toward the peripheral portion of the substrate 1 held by the turntable 2. Exhaust means 8 and 9 for exhausting air from within the splash preventing means 20 are provided.

Spin coating device

The metallic surface of a master plate or mother plate is oxidized in a solution of hypochlorite to form a parting layer upon which a metal layer is plated. The metal layer may be stripped from the master plate or mother plate aided by the parting layer to form a matrix or stamper from which a plastic record disc, such as, a video disc, can be molded.

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Tokyo, Japan

Akira Yoshio