Asahi Kasei Kabushiki Kaisha

Toppan Printing Co., Ltd.

Akira Yoshikawa

Tomohiro Morishita

Motoaki Iwaya

Ziyi Zhang

Aya Yokoyama

Ryosuke Hasegawa

Yoshihito Hagihara

Kazuhiro Nagase

Kazuhiko Ohta

Saki Ushida

To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate, a first conductivity type first nitride semiconductor layerformed on the substrate, and a first electrode layerformed on the first nitride semiconductor layer. The first electrode layercontains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layeror in the vicinity of the contact surface.

Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element

A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1&#xd7;10pieces to 1&#xd7;10pieces per cm. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference &#x394;H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

Nitride semiconductor substrate and method for manufacturing same

An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlGaN (0.4&#x2264;X&#x2264;0.90). The second nitride semiconductor layer contains AlGaN with a film thickness t (nm) satisfying 5&#x2264;t&#x2264;25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy &#x2212;0.009&#xd7;t+X+0.22&#x2212;0.03&#x2264;Y&#x2264;&#x2212;0.009&#xd7;t+X+0.22+0.03.

MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device

A laminated thermosetting decorative sheet has on its surface glossy protruding parts and matted recessed parts, and the recessed parts are preferably colored. This laminated thermosetting decorative sheet is manufactured using a press plate with an enamel layer having protruding parts whose enamel surfaces are matted.

Decorative laminate and a manufacturing method therefor

A laminated thermosetting decorative sheet has a three-dimensional pattern on its surface which consists of protruding parts and recessed parts forming smooth curves. This decorative laminate is manufactured by using a press plate having an enamel layer on the surface of a metal substrate.

Growing community of inventors

Tokyo, Japan

Akira Yoshikawa