Seiko Instruments Inc

Yamaichi Electronics Co., Ltd.

Sii Nanotechnology Inc.

Other

Nihon Denshi Kabushiki Kaisha

Holon Co., Ltd.

Akira Yonezawa

Etsuji Suzuki

Hidehisa Yamazaki

Osamu Takaoka

Mitsuyoshi Sato

Seiji Morita

Jun Nitta

Seiichi Nakagawa

Takahiro Shimoyama

Hiroshi Odaira

Toshio Okuno

Norimichi Anazawa

Tatenori Jinriki

Ryuichi Shimizu

Mitsuyoshi Satou

Masatsugu Kikuchi

High-frequency signal transmission cable includes: a dielectric layer; and first and second wiring layers arranged to sandwich the dielectric layer. The first wiring layer includes at least M (M indicating a natural number of 2 or more) differential transmission lines. The first wiring layer further includes a group of first ground lines including at least 2×M first ground lines. The second wiring layer includes a group of second ground lines including at least M second ground lines. The group of first ground lines are allocated to the M differential transmission lines in accordance with a condition of at least two first ground lines per one differential transmission line in non-overlap manner, and the group of second ground lines are allocated to the M differential transmission lines in accordance with a condition of at least one second ground line per one differential transmission line in non-overlap manner. Each of the differential transmission lines is interposed between the at least two first ground lines and is opposed to the at least one second ground line.

High-frequency signal transmission device and high-frequency signal transmission cable

A charged particle beam apparatus comprising a preparatory evacuation chamber (in FIG.A) into which a sample () is conveyed and which is preliminarily evacuated, an ultraviolet irradiation unit () which is disposed in the preparatory evacuation chamber () and which irradiates the surface of the sample () conveyed into the preparatory evacuation chamber (), with ultraviolet rays for a predetermined time period, and a sample chamber () into which the sample () is conveyed in the preliminarily evacuated state of the preparatory evacuation chamber () or from which the sample () is conveyed into the preparatory evacuation chamber (), wherein the ultraviolet irradiation of the sample () by the ultraviolet irradiation unit () is performed before the conveyance of the sample () into the sample chamber (), or/and after the conveyance thereof from the sample chamber (), thereby to remove contamination on the surface of the sample ().

Charged particle beam apparatus and contamination removal method therefor

An electron beam apparatus has an optical axis, an electron beam source for generating an electron beam directed along the optical axis, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample which is subjected to a negative voltage so that secondary electrons are emitted from the sample. The magnetic field lens has a conductive cylinder surrounding a part of the optical axis to permit the passage therethrough of an electron beam from the electron beam source. A first detector detects secondary electrons emitted by the sample in a direction away from the optical axis and is disposed at a position generally confronting the conductive cylinder. A second detector is disposed over the conductive cylinder. A Wien filter deflector deflects secondary electrons emitted by the sample toward and for detection by the second detector. The Wien filter deflector is disposed on the optical axis and between the conductive cylinder and the second detector.

Electron beam apparatus

A magnetic pole of a magnetic field type lens is divided into a first magnetic pole section that is at ground potential, and a second magnetic pole section facing a sample and to which a negative high voltage is applied, the first magnetic pole section and the second magnetic pole sectionbeing electrically insulated from each other, and an electric field type bi-potential lens is made up of an electrode attached to the first magnetic pole section so as to surround an electron beam path. High resolution observation with small chromatic aberration factor Cs, Cc is made possible without forming a positive high voltage section inside an electron beam path of a lens barrel.

Electromagnetic field superimposed lens and electron beam device using this electromagnetic field superimposed lens

In order to ensure that an electromagnetic field lens is capable of high-resolution observation using a magnetic field lens without leakage of magnetic flux, there is provided a magnetic field superimposing-type lens for focusing an electron beam onto a sample so as to irradiate the sample is provided with an upper magnetic pole a long way from the sample and a lower side magnetic pole close to the sample , with electrical insulation being provided between the upper magnetic pole and the lower magnetic pole by a ferrite insulator provided between the upper magnetic pole and the lower magnetic pole in an integral manner with the magnetic poles so that the upper magnetic pole and the lower magnetic pole may be held at different potentials. There is therefore no leak in flux from between the upper magnetic pole and the lower-magnetic pole , the chromatic aberration coefficient Cc can be made small, and high-resolution observation of the sample can be achieved.

Secondary electrons emitted by a sample placed within a lens magnetic field are detected by a plurality of secondary electron detectors to enable observation of a concave/convex sample surface. In a scanning electronic beam apparatus having upper and lower electrodes built in a single-pole magnetic-field type lens to place a sample within a lens magnetic field, a negative voltage is applied to the sample and the lower electrode opposed thereto while a zero or positive voltage is applied to the upper electrode, whereby an electric field for suppressing the helical motion of a secondary electron given off from the sample due to electron-beam irradiation is produced within an objective magnetic field space above the sample. The secondary electrons are detected by a division-type MCP or a plurality of scintillator-type secondary electron detectors sandwiching the optical axis.

Scanning electronic beam apparatus

The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage&mdash;in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.

A wiring board structure has an insulating base having at least one projection located thereon, wherein the insulating base and the at least one projection are integrally formed from a same piece of insulating material. The wiring board structure also has at least one lead located on the insulating base, wherein a part of the at least one lead covers the at least one projection to form at least one conductive bump.

Method of making conductive bump on wiring board

In an object lens of a type of generating a magnetic field of the side of a specimen and maing a principal plan of the lens close to the specimen for reducing aberration coefficients, an inner magnetic pole is formed in a shape of a cone having an angle of 30&deg; of less to an optical axis and an outer magnetic pole is also provided inside the cone by which even the large-size specimen can be inclined up to about 60&deg; and the large-size specimen can be observed with high resolution even when the specimen is inclined at a high angle.

Objective lens for scanning electron microscope

An interlayer connection structure in a circuit board characterized in that a local part of a conductive circuit layer disposed at one surface side of an insulative sheet is bent inwardly of the insulative sheet so that an apex of a projectingly bent portion is formed, and the apex of the projectingly bent portion is abutted with another conductive circuit layer disposed at the other surface side of the insulative sheet so that an interlayer connection is established therebetween.

Method of forming an interlayer connection structure

An high resolution electron beam observation instrument has an electron beam source, an electron beam optical system for converging the electron beam and scanning the electron beam across the surface of a sample, and a compound magnetic and electrostatic objective lens comprising a single pole magnetic lens having a single magnetic pole portion disposed between the electron beam source and the sample and an electrostatic immersion lens, the electrostatic immersion lens comprising an upper electrode and a lower electrode, one end of the upper electrode extending between the single magnetic pole portion and the sample, and the lower electrode being disposed between the upper electrode and the sample; wherein a deceleration electric field is generated between the upper electrode and the lower electrode to allow high resolution observation of the sample. The upper electrode may comprise the single magnetic pole portion of the single pole magnetic lens, or one or more seperate electrodes. The single pole magnetic lens has a conical shaped portion extending between the single magnetic pole portion and the electron beam source. A potential applied to the sample differs from a potential applied to the lower electrode when the sample is not inclined and a difference between the potentials of the sample and the lower electrode is reduced, or the potentials are made equal to each other when the sample is inclined by the sample inclining means.

Electron beam device

An IC package is provided that has a flexible wiring sheet, including an upper portion, a lower portion and a side portion which is wound around a base member over an upper surface, side surfaces and a lower surface of the base member. An IC is loaded on an upper surface of the upper flexible wiring sheet covering the upper surface of the base member. The IC is connected to an electrode provided on an upper lead pattern portion laid along the upper surface of the flexible wiring sheet. The lead pattern is extended from the upper flexible wiring sheet to the lower flexible wiring sheet via the side surfaces of the flexible wiring sheet covering side surfaces of the base member. An electrode to be connected with an object is arranged on the lower lead pattern portion which is formed on the lower flexible wiring sheet, and overall the IC or an IC connection portion is sealed on the upper surface of the upper flexible wiring sheet.

IC package having a single wiring sheet with a lead pattern disposed

A circuit board includes a wiring board which includes an insulative board having a wiring pattern on one surface thereof, a connection hole being formed in the insulative board such that the connection hole reaches the wiring pattern, a conductive bump, which is formed by growing a plating on the wiring pattern, being embedded in the connection hole, and the conductive bump serves as a connection to a wiring pattern which is intimately attached to the other surface of the insulative board.

Circuit board

An electron beam device having a single pole electromagnetic objective lens whose pole top face is positioned in front of a sample as viewed from the side of an electron beam source. A secondary electron detector is provided in the vicinity of the pole top face of an inner cylinder of the objective lens. The objective lens has a circular cylindrical or conical shape at the top of the objective lens and the vertical angle of the circular cylindrical or conical shape is 45.degree.-90.degree.. The working distance between the top of the objective lens and sample is less than 6 mm. It is possible to survey the sample with a resolving power corresponding to a dimension about one-half that of the prior art under low accelerating voltage conditions.

Scanning electron beam microscope with high resolution at low

An unipolar magnetic field type objective lens used as an objective lens of an electron beam device. By properly adjusting the shape and strength of the objective lens, not only the aberration coefficients of the objective lens are reduced but also the secondary electrons emitted from a sample are efficiently detected to thereby allow semiconductor wafers of large diameter to be observed at a low acceleration voltage, a large angle of inclination, and with a high resolution.

Growing community of inventors

Tokyo, Japan

Akira Yonezawa