Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Akira Yamane

Yoshimasa Amatatsu

Minoru Akaishi

Katsuya Okabe

Satoshi Onai

Yoshiaki Sano

Yuichi Watanabe

Yasuo Oishibashi

The invention enhances resistance to a surge in a semiconductor device having a semiconductor die mounted on a lead frame. An N type embedded layer, an epitaxial layer and a P type semiconductor layer are disposed on the front surface of a P type semiconductor substrate forming an IC die. A metal thin film is disposed on the back surface of the semiconductor substrate, and a conductive paste containing silver particles and so on is disposed between the metal thin film and a metal island. When a surge is applied to a pad electrode disposed on the front surface of the semiconductor layer, the surge current flowing from the semiconductor layer into the semiconductor substrate runs toward the metal island through the metal thin film.

Semiconductor device with parasitic bipolar transistor

A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

Semiconductor device and manufacturing method of the same

In a semiconductor device according to the present invention, a plurality of opening regionstoare formed in an insulating film on a pad electrode. A metal layerformed on the pad electrodehas a plurality of concave portionstoformed therein by covering the opening regionsto. Moreover, in a peripheral portion at a bottom of each of the concave portionstoin the metal layer, the metal layerand a Cu plating layerreact with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode. Thus, a resistance value on the pad electrodeis reduced.

Semiconductor device and manufacturing method thereof

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Gunma, Japan

Akira Yamane