Daiwa Seiko, Inc.

Nisshinbo Industries, Inc.

Taiyo Nippon Sanso Corporation

Tdk Corporation

Kokusai Denshin Denwa Co., Ltd.

Kddi Corporation

Tokyo Seimitsu Co., Ltd.

Hitachi, Ltd.

Kdd Corporation

Fuji Photo Film Company, Limited

Asahi Kasei Kogyo Kabushiki Kaisha

Riken Corporation

Tokyo University of Agriculture and Technology

Ddi Corp.

Murata Manufacturing Co., Ltd.

Akira Yamaguchi

Eiji Shinohara

Yoshio Takeuchi

Wataru Tsutsumi

Yoji Ise

Kazuo Saito

Shinichi Asano

Fumio Watanabe

Toshinori Suzuki

Tatsuya Kojima

Shogo Murosawa

Masatoshi Katayama

Toru Tonogai

Raitaro Masaoka

Toshio Mizuno

Kyoichi Kaneko

Hideo Kobayashi

Nobuyuki Yamaguchi

Satoshi Masuda

Kazuhito Hashimoto

Akinori Koukitu

Naoki Kasai

Manabu Yoshimura

Yasumichi Tokuoka

Kazuo Hirano

Shinji Takeuchi

Hideshi Tomita

Hisashi Murakami

Kunio Takada

Takashi Inoue

Shigeki Satou

Toru Hayashi

Kaname Ueda

Kyotaro Abe

Yoshiaki Amano

Tsukasa Sato

Akira Ichihashi

Hiroki Ishida

Masatomo Tanaka

Masaji Saito

Yoshifumi Shimizu

Yasushi Mochizuki

Masayoshi Ohashi

Kyouichi Kaneko

Akinori Iwasaki

Yuji Shigesawa

Kosuke Uchiyama

Ryuhei Nakamura

Teruo Kanno

Yasuhito Iguchi

Yuta Sato

Masato Inagaki

Masami Kamaya

Takashi Ishimoto

Seiichiro Sakai

Shirou Mazawa

Hisato Iwai

Takenori Takahashi

Masagi Saito

Tadanobu Arimura

Toshiro Mori

Kazushige Shiina

Kohji Aizawa

Hirotaka Kakizaki

Wataru Kawasaki

Yoshiaki Chiba

Konosuke Murakami

Kazuhisa Aoki

Shigenobu Nagasawa

Shiro Matsui

Yoshihiko Nodera

Yoshihiko Ito

Katsuhiko Miyaso

Tetsuya Yasunaka

Teppei Aoki

Kazuma Takii

Naoyuki Yamazoe

Yoshio Takauchi

Hayato Shimamura

Fumitsugu Nakayama

Takashi Motoyama

Akinori Ubukata

The wafer test system includes: a prober including a chuck that holds a semiconductor wafer and a probe card having probe needles thereon, and brings the probe needles in contact with semiconductor chips formed on the semiconductor wafer to inspect the semiconductor chips; an overhead hoist transport that delivers the cassette that houses the plurality of semiconductor wafers to be inspected to the prober and withdraws, from the prober, the cassette that houses the semiconductor wafers that have been inspected; a conveying control unit that controls the overhead hoist transport to convey the probe card between a replacement position of the probe card predetermined in the prober and a storage of the probe card located in a place different from the prober; and a card conveying mechanism that conveys the probe card between a holding position in the prober and the replacement position.

Wafer test system, probe card replacing method, and prober

The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus () for a component of a semiconductor production apparatus including: a cleaning processing furnace () which is configured to house the component () of a semiconductor production apparatus; a heating device (); a gas introduction pipe (); a gas discharge pipe (); a decompression device (); a first temperature control device (); a second temperature control device (); and a purge gas supply device ().

Cleaning apparatus for component for semiconductor production apparatus, cleaning method for component of semiconductor production apparatus, and cleaning system for component of semiconductor production apparatus

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Vapor-liquid reaction device, reaction tube, film forming apparatus

Provided is a catalyst that exhibits a high catalyst activity in a water oxidation reaction within a neutral range. A water splitting catalyst comprises at least one 3d-block transition metal element selected from manganese, iron, cobalt, nickel, and copper or a compound containing the element, and a base and/or a carbonate having a pKa of 8 or less.

Water splitting catalyst, and method for producing oxygen and hydrogen using the same

The present invention provides a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method that can suppress warpage in a semiconductor wafer due to a temperature difference between the mounting surface of a table and the semiconductor wafer. In a prober of the present invention, a semiconductor wafer is heated to have a second temperature which is equal to or lower than a first temperature in a preheating step using an oven, and then the semiconductor wafer is placed on a mounting surface of a table which is heated to the first temperature. Thus, because a temperature difference between the mounting surface of the table and the semiconductor wafer is reduced in the prober, it is possible to suppress warpage in the semiconductor wafer that occurs right after the semiconductor wafer is placed on the mounting surface.

Semiconductor wafer inspection apparatus and semiconductor wafer inspection method

Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state.

Vapor phase growth apparatus

A prober includes: a wafer chuck having a conductive support surface; a movement rotation mechanism which moves and rotates the wafer chuck; a head stage which holds a probe holding portion; a stage member which has a conductive stage surface that is formed in parallel to the support surface and electrically connected with the support surface, and can move integrally with the wafer chuck; and a contactor which is fixed to a position facing the stage member and whose tip can electrically come into contact with the stage surface, wherein the stage member is separated from the wafer chuck as a separate body, and the stage surface and the support surface are electrically connected through a wiring member; and a back-surface electrode of a chip is electrically connected with a tester through the wafer chuck, a wiring, the stage member and the contactor.

Prober

The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and

Susceptor and vapor-phase growth apparatus

A production method of an electronic device comprising the steps of forming a stacked body by stacking green sheets and electrode layers having a predetermined pattern and firing the stacked body. Before forming the stacked body, a blank pattern layer is formed on a space portion of the electrode layer having a predetermined pattern. The electrode level difference absorbing print paste for forming the blank pattern layer includes at least ceramic powder and a binder resin, and a polymerization degree of the binder resin is made equal to or more than that of a binder resin included in slurry for forming the green sheet. The binder resin of the electrode level difference absorbing print paste includes polyvinyl butyral resin with a polymerization degree of 1400 or more, a butyralation degree of 64 to 74 mol % and an acetalization degree of 66 to 74 mol %.

Electrode level difference absorbing print paste and method of producing electronic device

A laminated ceramic electronic component includes a ceramic substrate, an internal electrode, and a buffer layer. The ceramic substrate includes a protective layer and a functional layer. The protective layer is disposed on at least one side of the functional layer. The internal electrode is embedded in the functional layer. The buffer layer is embedded in the protective layer and has a different burning shrinkage from the ceramic substrate.

Laminated ceramic electronic component

Internal electrode layers are superimposed in a dielectric substrateat intervals. Step absorption layers are respectively provided on lateral sides of the internal electrode layers. A side portion of the internal electrode layer forms an inclined surface, and the step absorption layer is superimposed so as to partially overlap the inclined surface of the internal electrode layer. This is also applied to the other internal electrode layers and step absorption layers.

Multilayer electronic component and manufacturing method thereof

A laminated electronic component includes a ceramic body having an inner portion and a pair of outer portions disposed above and below the inner portion and a pair of external electrodes disposed on lateral sides of the ceramic body. A plurality of internal electrodes are embedded in the inner portion and alternately connected to the external electrodes. At least two layers of dummy electrodes are embedded in at least one of the outer portions and each connected to one of the external electrodes. An innermost one of the dummy electrodes has a same polarity as an adjacent outermost one of the internal electrodes. The dummy electrodes include at least one pair of adjacent dummy electrodes of opposite polarities.

Laminated electronic component

A multi-beam cellular base station is for sending a spread spectrum signal to at least one mobile station, the base station comprising: first antenna for sending a common channel by a common beam that a directional pattern is formed previously; second antenna for sending a dedicated channel by a dedicated beam that a directional pattern is formed for each mobile station; and switching means for switching a sending time section of the common beam and a sending time section of the dedicated beam so that the sending time sections do not overlap within a time slot, the common beam and the dedicated beam are sent by same frequency.

Multi-beam cellular base station, mobile station and method for sending spread spectrum signal

A wireless packet communication system and a base station using an algorithm modified from an existing Proportional Fairness algorithm enables a control according to flexible adjustment of a throughput difference between mobile units and a priority between mobile units. A function for controlling a difference in throughput and a function for controlling a difference in throughput by the class by classifying a mobile unit are added to the conventional Proportional Fairness algorithm, thereby enabling flexible operation which is suitable for actual operation.

Wireless packet communication system and base station

In a mobile communication system having a plurality of radio packet channels of different transmission rate with each other between a base station and a mobile station, undesirable interference to adjacent cells of adjacent base stations is decreased. Signal quality of a receive signal at a mobile station is measured, and the better said signal quality is, the higher packet channel is assigned. Thus, although signal quality is poor because of long distance between a base station and a mobile station, no increase of transmission power of a base station is requested. Thus, interference to adjacent cells is decreased. When high rate packet channel is selected, short packet transmission time may be assigned so that amount of data transmission is kept uniform in spite of said signal quality.

Mobile communication system having adaptively assigned packet rate

Growing community of inventors

Tokyo, Japan

Akira Yamaguchi