Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Akira Yamaga

Kenta Yasufuku

Masanobu Shirakawa

Tokumasa Hara

Hironori Uchikawa

Kejen Lin

Juan Shi

Shinichi Kanno

Shigehiro Asano

Kenichiro Yoshii

Osamu Torii

Keiri Nakanishi

Kazuhiro Fukutomi

Sho Kodama

Naomi Takeda

Koji Horisaki

Ryo Yamaki

Daisuke Iwai

Naoaki Kokubun

Shigefumi Irieda

Tatsuhiro Suzumura

Ikuo Magaki

Yuta Kumano

Yu Nakanishi

Kiichi Tachi

Arata Miyamoto

Naoto Oshiyama

Kazumasa Yamamoto

Susumu Tamon

A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.

Memory system having semiconductor memory device that performs verify operations using various verify voltages

A memory system includes a nonvolatile memory and a memory controller configured to perform reading of a concatenation code from the nonvolatile memory in response to an external command, the memory controller including a decoder circuit which decodes a reception word in the concatenation code. The decoder circuit includes a first external code decoder that performs decoding on an external code portion, an internal code in-error bit estimation unit that performs estimation of an in-error bit on a bit sequence from the first external code decoder, based on a rule for an internal code in the concatenation code, and outputs a set of in-error bits that is obtained by the estimation, and a second external code decoder that performs decoding which uses the set of in-error bits that is output from the internal code in-error bit estimation unit, on the bit sequence from the first external code decoder.

Memory system

Semiconductor memory device and writing operation method thereof in which first memory cells of a page that are in a first group of contiguous columns are programmed and verified separately from second memory cells of the same page that are in a second group of contiguous columns that does not overlap with the first group

According to one embodiment, a controller writes either processed data or preprocessing data and flags into each page included in m pages. The processed data is data after first data translation of write data to be written into a relevant page. The preprocessing data is data before the first data translation of the write data to be written into the relevant page. Each of the flag at least represents whether or not the first data translation is performed for write data to be written into the relevant page.

According to one embodiment, a controller writes first processed data acquired by a first process into a nonvolatile memory during a first period. The controller writes second processed data acquired by a second process into the nonvolatile memory during a second period. The first process is for the purpose of improving the endurance of memory cells. The second process is for the purpose of decreasing inter-cell interferences between adjacent cells.

Write data optimization methods for non-volatile semiconductor memory devices

Semiconductor memory device and writing operation method thereof

A memory controller includes a memory interface that has multiple channels and carries out writing into a nonvolatile memory through each of the channels, a data buffer, an ECC (error correcting code) encoder for applying an error correction encoding processing on write data which are to be written into the nonvolatile memory to generate ECC data, a channel allocation part for allocating the channels to the write data and the ECC data based on a write data format of the nonvolatile memory, a write data reception processing part that stores the write data in the data buffer and outputs the write data to the ECC encoder, and a channel scheduler for transferring the write data stored in the data buffer and the ECC data to the channels of the memory interface as allocated by the channel allocation part.

Memory controller, memory system, and memory write method

A storage device according to an embodiment includes first and second non-volatile semiconductor memories. In addition, the storage device includes first controller that controls the first non-volatile memory to cause the first non-volatile memory to perform processes. In addition, the storage device includes second controller that controls the second non-volatile memory to cause the second non-volatile memory to perform processes. The storage device further includes a signal line which is connected to the first controller and the second controller and through which a token is transmitted between the first controller and the second controller. The first controller is capable of controlling the first non-volatile memory while holding the token and the second controller is capable of controlling the second non-volatile memory while holding the token.

Storage device

According to an embodiment, a memory system includes semiconductor memories each having a plurality of blocks; a first table; a receiving unit; a generating unit; a second table; and a writing unit. The first table includes a plurality of memory areas each associated with each block and in each of which defect information is stored. The generating unit generates a set of blocks by selecting one block to which data are to be written in each semiconductor memory based on an index number indicating one of a plurality of rows in the first table and the first table. In the second table, an index number and a channel number are stored for each logical block address in association with one another. When a write command is received by the receiving unit, the writing unit writes data to a block associated with a selected channel number among blocks constituting the set.

Memory system and computer program product

A semiconductor storage device, a method of controlling the same, and an error correction system allow reduction in power consumption and circuit scale without detriment to error correction capability. An error correction code (ECC) circuit of a solid state drive (SSD) performs first error correction on read data using a first error correction code (Hamming code), and further performs second error correction on the result of the first error correction using a second error correction code (BHC code). Furthermore, the ECC circuit performs third error correction on the result of the second error correction using a third error correction code (RS code).

Semiconductor storage device, method of controlling the same, and error correction system

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Kanagawa, Japan

Akira Yamaga