Denso Corporation

Denso Corpora Tion

Akira Yamada

Satoshi Shiraki

Shigeki Takahashi

Hiroyuki Ban

Nozomu Akagi

Youichi Ashida

Norihito Tokura

Takashi Nakano

Yoshiaki Nakayama

Takashi Suzuki

Akio Nakagawa

Masahiro Yamamoto

Shoji Mizuno

Takuya Okuno

Akihiro Imura

Takeshi Sakai

Hiroaki Himi

Atsuyuki Hiruma

Hidetoshi Muramoto

Takuro Nakaoka

Takeshi Kuzuhara

Hiroyasu Kudo

Shinya Sakurai

Atsushi Kasahara

Mutsuya Motojima

Yoshitomo Takeuchi

Hiroki Sone

Yosuke Kondo

Hiroshi Kameoka

Tomohisa Suzuki

A control apparatus controls the operation of a starter such that, after an idling stop is executed and before a request for starting an engine is subsequently issued, the control apparatus executes a preset which causes a pinion to engage a ring gear. A control apparatus controls the operation of a starter such that, after an idling stop is executed and before a request for starting an engine is subsequently issued, the control apparatus executes a preset which causes a pinion to engage a ring gear. It is determined that the preset condition has been cancelled, and the preset is again executed. In that case, the pinion is already engaged with the ring gear at the time point when a request for starting the engine is issued. In that way it is unnecessary for the control apparatus to push out the pinion after a start request is issued.

Engine starter apparatus

A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.

Semiconductor device

A semiconductor device includes a lateral transistor having: a semiconductor substrate including a drift layer; a first impurity layer in the drift layer; a channel layer in the drift layer; a second impurity layer in the channel layer; a separation insulation film on the drift layer between the channel layer and the first impurity layer; a gate insulation film on a channel region between the second impurity layer and the drift layer connected with the separation insulation film; a gate electrode on the gate insulation film and the separation insulation film; a first electrode connected with the first impurity layer; a second electrode connected with the second impurity layer and the channel layer; and a field plate on the separation insulation film between the gate electrode and the first electrode and connected with the first electrode. The field plate is larger than the gate electrode in a current direction.

A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

Lateral semiconductor device

A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1&#xd7;10cm.

Semiconductor device having lateral element

A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

Current sensor, inverter circuit, and semiconductor device having the same

A semiconductor device includes a high-breakdown-voltage transistor having a semiconductor layer. The semiconductor layer has an element portion and a wiring portion. The element portion has a first wiring on a front side of the semiconductor layer and a backside electrode on a back side of the semiconductor layer. The element portion is configured as a vertical transistor that causes an electric current to flow in a thickness direction of the semiconductor layer between the first wiring and the backside electrode. The backside electrode is elongated to the wiring portion. The wiring portion has a second wiring on the front side of the semiconductor layer. The wiring portion and the backside electrode provide a pulling wire that allows the electric current to flow to the second wiring.

Semiconductor device with high-breakdown-voltage transistor

A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

Load driving device

A semiconductor apparatus is disclosed. The semiconductor apparatus includes an SOI substrate including an active layer, a buried insulation film and a support substrate; a low potential reference circuit part located in the active layer and operable at a first reference potential; a high potential reference circuit part located in the active layer and operable at a second reference potential; a level-shifting element forming part located in the active layer and for providing a level-shift between the first and second reference potentials; and an insulation member insulating first and second portions of the support substrate from each other, wherein locations of the first and second portions respectively correspond to the low and high potential reference circuit parts.

Semiconductor apparatus

A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a semiconductor substrate having a first semiconductor layer, an insulation layer and a second semiconductor layer, which are stacked in this order; a LDMOS transistor disposed on the first semiconductor layer; and a region having a dielectric constant, which is lower than that of the first or second semiconductor layer. The region contacts the insulation layer, and the region is disposed between a source and a drain of the LDMOS transistor. The device has high withstand voltage in a direction perpendicular to the substrate.

Method for manufacturing semiconductor device having LDMOS transistor

A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode.

Growing community of inventors

Nukata-gun, Japan

Akira Yamada