Showa Denko K.k.

Akira Uzawa

Atsushi Matsumura

Noriyoshi Seo

Noriyuki Aihara

A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.

Method for manufacturing tunnel junction layer

A light-emitting element layerincludes: an n-type contact layer; a first light-emitting layer; a tunnel junction layer; a second light-emitting layer; and a p-type contact layerlaminated in this order. The first light-emitting layerand the second light-emitting layeremit light of the same wavelength. The tunnel junction layerincludes: a p-type tunnel layermade of AlGaAs containing p-type impurities (C); and an n-type tunnel layermade of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layerhaving a higher concentration of n-type impurities than the n-type tunnel layeris arranged between the p-type tunnel layerand the n-type tunnel layer

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Chichibu, Japan

Akira Uzawa