Nec Corporation

Hitachi Cable, Inc.

Other

Kovax Corporation

Mitsubishi Denki Kabushiki Kaisha

Osaka University

Itochu Plastics Inc.

Akira Usui

Masatomo Shibata

Yuichi Oshima

Haruo Sunakawa

Yukio Yoshida

Toshikazu Takada

Yuji Mochizuki

Takehiro Yoshida

Masashi Yoshimura

Yoichiro Tabata

Takashi Ito

Yusuke Mori

Akira Sakai

Takao Miyajima

Shigetaka Tomiya

Masaaki Nido

Mamoru Imade

Yoshishige Matsumoto

Takanori Higashihara

Masashi Isemura

Masashi Mizuta

Akihiko Maruyama

Takeshi Eri

Yasunori Mochizuki

Naoki Mita

Yutaka Kanai

Hidetoshi Tashiro

Yoshishige Kato

Hiroyuki Miura

Yoshie Chiba

Hisatsune Watanabe

Haruo Sunagawa

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystalby liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystalon the first crystalby vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals(preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystalsto produce a first crystal

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

Provided is a durable abrasive article which can conform even to a surface of a complicated shape and has an excellent abrasive power and which does not give any deep flaw to become a problem at a subsequent step and is not broken even when used in sanding the surface of the complicated shape. The abrasive article comprises a flexible resin film, an abrasive grain layer formed on the surface of the resin film, and an extremely flexible resin layer formed on the abrasive grain layer, wherein the flexible resin film has a thickness of 10 to 200 &#x3bc;m, a tensile strength of 30 to 130 MPa and an elongation of 3 to 250%, wherein the abrasive grains of the abrasive grain layer are of P280 to P12, and wherein the extremely flexible resin layer has a 100% M of 1 to 20 MPa, a tensile strength of 20 to 90 MPa and an elongation of 250 to 1000%.

Abrasive article

A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with assistance of a heat treatment, to atoms constituting the base layer to promote removal of constitutional atoms from the base layer, whereby pores penetrating the metal layer are formed, while many voids are formed in the nitride-based compound semiconductor base layer. An epitaxial growth of a nitride-based compound semiconductor crystal is made with an initial transient epitaxial growth, which fills the voids, and a subsequent main epitaxial growth over the porous metal layer.

Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density

The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: forming a metallic Ti filmon a sapphire substrate, followed by treatment of nitration to convert it into a TiN filmhaving fine pores; thereafter growing a HVPE-GaN layerthereon; forming voidsin the HVPE-GaN layerby means of effects of the metallic Ti filmand the TiN film; and peeling the sapphire substratefrom the region of the voidsto remove it therefrom.

Group III nitride semiconductor substrate and its manufacturing method

To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of:

Group III nitride based semiconductor substrate and process for manufacture thereof

To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of:

Semiconductor substrate made of group III nitride, and process for manufacture thereof

Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure

A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to the compound semiconductor layer. The method comprises the steps of forming the compound semiconductor layer (first, second and third compound semiconductor layers) on the single-crystal substrate (sapphire substrate) through crystal growth so as to partially have a space between the compound semiconductor layer and the single-crystal substrate; and removing the compound semiconductor layer from the sapphire substrate by irradiating the compound semiconductor layer from a side of the sapphire substrate with a laser beam passing through the single-crystal substrate and being absorbed in the compound semiconductor layer to melt an interface between the single-crystal substrate and the compound semiconductor.

Method of manufacturing compound semiconductor substrate

Method for manufacturing group III-V compound semiconductors

An improvement in a short-gap ozonizer having a gap of 0.5 mm or shorter between facing flat electrodes. By adjusting the height of a spacer, sandwiched between the flat electrodes, from the flat side of the electrode, the gap is adjusted to adjust the dispersion of the gap between the flat electrodes.

Ozonizer

This invention relates to a novel microorganism capable of oxidizing manganese such as the genus Cedecea bacterium GSJ/MITA24A/ASHO-RO/1, the genus Aeromonas bacterium GSJ/MITA24B/ASHO-RO/2, or the genus Shewanella bacterium GSJ/MITA24C/ASHO-RO/3; to a method for removing manganese from water containing manganese, which comprises contacting the water containing manganese with a microbial symbiont of algae and one or more microorganisms capable of oxidizing manganese to oxidize and precipitate the manganese, thereby removing the manganese from the water; and to a method of recycling the recovered manganese.

Microorganisms, microbial symbionts, their culture methods, and methods for treating manganese-containing water using them

A GaN crystal film having a mask patterned in a stripe for forming multiple growing areas on a sapphire substrate and coalesced GaN crystals covering the mask dividing the areas, grown from the neighboring growing areas, comprising defects where multiple dislocations along with the stripe are substantially aligned with the normal line of the substrate, in the crystal areas over the mask, and dislocations propagating in substantially parallel with the substrate surface while, in the vicinity of the areas where the crystals are coalesced over the mask, propagating substantially in the normal line of the substrate surface, and a manufacturing process therefor. According to this invention, there can be provided a GaN crystal film in which strain, defects and dislocations are reduced and which tends not to generate cracks.

GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor

An abrasive sheet has an abrasive particle layer formed on a surface of a thin flexible resin film. The abrasive sheet is produced by the steps of preparing a releasable film, forming a thin flexible resin film layer on a release agent applied surface of the releasable film and forming an abrasive particle layer on an upper surface of the resin film layer. Thereafter, the resin film having the abrasive particle layer formed thereon is removed from the releasable film, and the resin film having the abrasive particle layer formed thereon is cut into any suitable size. The abrasive sheet can provide higher polishing power during the polishing operation, but it polishes a surface while tracing or following any orange peel on the surface. Therefore, the abrasive sheet is effective for use as the polishing tool that can replace the fine compound buffing process currently utilized in the automobile repairing industry.

Method of manufacturing abrasive sheet with thin resin film

Growing community of inventors

Tokyo, Japan

Akira Usui