Canon Kabushiki Kaisha

Other

Kiyotaka Wasa

Wasa, Kiyotaka

Akira Unno

Tetsuro Fukui

Takanori Matsuda

Takao Yonehara

Yasuyuki Watanabe

Kazuya Ishiwata

Yasuhide Goseki

Naoya Nishida

Kenji Fujishima

Shigemori Tanaka

Hiroshi Aoto

Yutaka Kagawa

Akio Ikesue

Yusuke Yamada

Yuichi Hashimoto

Keiichi Murai

Hajime Miyazaki

Hiroto Hasegawa

Kazushige Nakamura

Mitsuru Honda

Mineto Yagyu

Noriyuki Doi

Fumihiro Arahira

Hitoshi Toma

Naotake Sato

Ako Takemura

The present invention provides an organic semiconductor device, which can be produced uniformly on a large substrate, having a high mobility and capable of greatly modulating the drain current by varying the voltage applied to a gate electrode. The present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and conductors, and having electrodes for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is formed of a copolymer of methyl methacrylate and divinylbenzene, or the like; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.

Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

BaTiO&#x2014;PbTiOseries single crystal is single-crystallized by heating BaTiO&#x2014;PbTiOcompact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO&#x2014;PbTiOseries single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

[object Object]

A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500&#xb0; C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450&#xb0; C. with a cooling speed of 30&#xb0; C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

Structure of piezoelectric element and liquid discharge recording head, and method of manufacture therefor

An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrodeon the surface of a substrate, providing thereon a gate insulating layer, providing on the surface of the gate insulating layeran island-shaped protrusion layerhaving dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layera source electrodeand a drain electrodewith a distance therebetween, providing thereon an organic semiconductor layerin contact with the island-shaped protrusion layerand both electrodesand, and further providing a protective filmon the organic semiconductor layer

Organic semiconductor element, production method therefor and organic semiconductor device

A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500&#xb0; C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450&#xb0; C. with a cooling speed of 30&#xb0; C./min or more.

Process of manufacturing a piezoelectric element

A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.

Method for manufacturing a liquid ejecting head

A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Piezoelectric structure, liquid ejecting head and manufacturing method therefor

A method for manufacturing a piezoelectric film type actuator, which is provided with a piezoelectric film and an oscillating plate structural member bonded therefor, comprises the steps of forming a piezoelectric film on an intermediate transfer member; bonding the piezoelectric film on the intermediate member and the oscillating plate structural member; and peeling off the intermediate transfer member from the piezoelectric film. Through the steps thus arranged, it becomes possible to enhance the bonding strength and durability of the piezoelectric film and the oscillating plate structural member without using a bonding agent in the manufacture of a highly reliable piezoelectric film type actuator.

Piezoelectric film type actuator, liquid discharge head, and method of manufacturing the same

A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Semiconductor substrate, SOI substrate and manufacturing method therefor

An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from &minus;15&deg; C. to 110&deg; C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.

Process for producing electromagnetic-wave absorber

BaTiO &mdash;PbTiO series single crystal is single-crystallized by heating BaTiO &mdash;PbTiO compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO &mdash;PbTiO series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator

A liquid crystal device includes a pair of transparent substrates disposed with a prescribed gap therebetween and each having a transparent electrode thereon, a photoelectric conversion semiconductor layer not subjected to rubbing formed on one of the pair of transparent substrates, and alignment film subjected to rubbing formed on the other of the pair of transparent substrates, an a liquid crystal disposed between the photoelectric conversion semiconductor layer and the alignment film. As the photoelectric conversion semiconductor is freed from an aligning performance, the material thereof is freed from the constraint and can be selected so as to optimize the photoelectric conversion performance.

Liquid crystal device and process for production thereof

A color filter is produced through the steps of: forming a layer of a color filter material including a colorant dispersed in a photosensitive resin on a substrate; and pre-baking, exposing and developing the color filter material layer to leave a color filter pattern on the substrate. In the developing step, a developer liquid is applied in the form of a curtain onto the exposed color filter material layer on the substrate, the substrate is allowed to stand in a substantially still state and then the substrate is supplied with an ultrasonic wave projected perpendicularly to the substrate while being in contact with the developer liquid. The ultrasonic wave is preferably uniformized by at least two rotating reflection or diffusion plates before it is projected onto the substrate. As a result, the color filter pattern can be developed with little development irregularity even on a large-size substrate.

Growing community of inventors

Kanagawa, Japan

Akira Unno