Seiko Epson Corporation

Akira Uematsu

Yoichi Sato

Akira Komatsu

Kunihiko Yano

Atsushi Matsuo

Yoshiyuki Terashima

Noriyuki Nakamura

Hirofumi Yasuda

A spectroscopic sensor that applies lights in a wavelength band containing plural wavelengths to an object and spectroscopically separates reflected lights or transmitted lights from the object using plural light band-pass filters that transmit the respective specific wavelengths and plural photosensor parts to which corresponding transmitted lights are input based on output results of independent photosensors. The spectroscopic sensor may be integrated in a semiconductor device or module by integration using a semiconductor process and downsizing may be realized.

Spectroscopic sensor device and electronic equipment

To provide an optical sensor, an electronic apparatus, etc. that suppress reduction of spectroscopic characteristics. The optical sensor includes a light receiving element, an optical filterthat transmits a light having a specific wavelength of incident lights with respect to a light receiving region of the light receiving element, and an angle limiting filterthat limits an incident angle of the incident light transmitted through the optical filter

Optical sensor and electronic apparatus

A semiconductor wafer includes a semiconductor substrate, a dielectric multilayer film formed on the semiconductor substrate and serving as an optical filter on a light receiving sensor, and a light detection region formed in the semiconductor substrate, with the Poisson ratio VS, Young's modulus ES, the radius r, and the thickness b of the semiconductor substrate, stress &#x3c3; in the dielectric multilayer film, and the thickness d of the dielectric multilayer film satisfy a relationship 1.0&#xd7;10&#x2267;{3&#xd7;r&#xd7;d&#xd7;(1&#x2212;VS)&#xd7;&#x3c3;}/(ES&#xd7;b).

Semiconductor wafer, method for manufacturing light receiving sensor, and light receiving sensor

A spectroscopic sensor has plural angle limiting filters that limit incident angles of incident lights, plural light band-pass filters that transmit specific wavelengths, and plural photodiodes to which corresponding transmitted lights are input. The spectroscopic sensor is a semiconductor device in which the angle limiting filters, the light band-pass filters, and the photodiodes are integrated, and, assuming that the surface on which impurity regions for the photodiodes are formed is a front surface of a semiconductor substrate, holes for receiving lights are formed in the impurity regions from the rear surface side.

Spectroscopic sensor and electronic apparatus

A spectroscopic sensor that applies lights in a wavelength band containing plural wavelengths to an object and spectroscopically separates reflected lights or transmitted lights from the object using plural light band pass filters that transmit the respective specific wavelengths and plural photosensor parts to which corresponding transmitted lights are input based on output results of independent photosensors. The spectroscopic sensor may be integrated in a semiconductor device or module by integration using a semiconductor process and downsizing may be realized.

An optical sensor includes a light receiving element (for example a photodiode) and an angle limiting filter that limits the incidence angle of incidence light with respect to the light receiving area of the light receiving element. When a wavelength of the incidence light is denoted by &#x3bb;, a height of the angle limiting filter is denoted by R, and a width of an opening of the angle limiting filter is denoted by d, 'd/&#x3bb;R&#x2267;2' is satisfied.

Optical sensor and electronic apparatus utilizing an angle limiting filter

An optical sensor includes an impurity region for a photodiode and an angle limiting filter limiting the incidence angle of incidence light incident to a light receiving area of the photodiode, which are formed on a semiconductor substrate. The angle limiting filter is formed by at least a first plug corresponding to a first insulating layer and a second plug corresponding to a second insulating layer located in an upper layer of the first insulating layer. Between the first plug and the second plug, there is a gap area having a gap space that is equal to or less than &#x3bb;/2.

An exemplary embodiment matches the input impedance of the receiving device to characteristic impedance, even with the receiving device composed with the MOS transistor, with a receiving device for data transfer with the differential-current driven model including: a receiving node to receive a differential current signal; a current-voltage conversion device to convert current into a voltage corresponding to differential current signal from the receiving node; an impedance matching device to match the input impedance to characteristic impedance, including a low impedance circuit device that enables generation of a low impedance which is lower than the characteristic impedance of a sending-side transmission line that is connected to the receiving node as an input impedance of the receiving node; and a comparator into which a differential-voltage signal from the current-voltage conversion device is input as a comparison signal, and which outputs the comparison result thereof as an output data.

Receiving device

A semiconductor memory device for reading data from a selected memory cell. The memory cells are arranged in an array. First bit lines and word lines, coupled to the memory cells, are arranged in a matrix. The word lines select the selected cell. An amplification circuit amplifies the current passing through the selected memory cell and is coupled to the first bit line. A second bit line is coupled to the amplification circuit and carries the amplified current. A sensing circuit coupled to the second bit line senses the current on the second bit line. As a result, the current passing through the selected memory cell is detected.

Semiconductor memory device

A semiconductor memory device for reading data from a selected memory cell. The memory cells are arranged in an array. First bit lines and word lines, coupled to the memory cells, are arranged in a matrix. The word lines select the selected cell. An amplification circuit amplifies the current passing through the selected memory cell and is coupled to the first bit. A second bit line is coupled to the amplification circuit and carries the amplified current. A sensing circuit coupled to the second bit line senses the current on the second bit line. As a result, the current passing through the selected memory cell is detected.

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Suwa, Japan

Akira Uematsu