Ube Industries, Inc.

Panasonic Corporation

Ube Material Industries, Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Other

Matsushita Electric Industrial Co., Ltd.

Nippon Tungsten Co., Ltd.

Sanyo Electric Co., Ltd.

Akira Ueki

Koji Abe

Toshikazu Hamamoto

Takeshi Harada

Yasuo Matsumori

Tsutomu Takai

Junichi Shibata

Kazuhiro Miyoshi

Shoichiro Watanabe

Shusaku Goto

Masaru Takagi

Takayuki Watanabe

Toru Inagaki

Kouichi Fukuda

Sumihito Ishida

Seiji Noguchi

Satoru Sano

Masato Yamauchi

Masatoshi Takahashi

Atsushi Ishii

Hideharu Takezawa

Takashi Takeuchi

Hajime Konishi

Yusuke Hara

Shigeyuki Unoki

Kozaburo Yoshida

Akihisa Iwasaki

Dai Motojima

Masanobu Takasu

Katsumi Yamashita

Takaaki Tanaka

Akio Nishida

Michiya Takahashi

Chikako Chida

Shinzo Mitomi

Zensaku Yasutake

Akihiro Moto

Takuya Mishima

Yoshihiro Nishimura

Yuuzou Katou

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

MgO target for sputtering

A moisture absorbent for an organic EL element having hydrophobicity and no reduction in moisture absorption speed, and a method for producing the moisture absorbent are provided. The moisture absorbent for an organic EL element includes, as a main component, calcium oxide particles each having an alkoxide layer on the surface thereof. Furthermore, the method for producing a moisture absorbent for an organic EL element includes dry-pulverizing calcium oxide in the presence of an alcohol, and thereafter dry-treating the pulverized calcium oxide.

Moisture absorbent for organic electroluminescence element and production method for same

A semiconductor device includes a stacked via structure including a plurality of first vias formed over a substrate, a first interconnect formed on the plurality of first vias, a plurality of second vias formed on the first interconnect, and a second interconnect formed on the plurality of second vias. One of the first vias closest to one end part of the first interconnect and one of the second vias closest to the one end part of the first interconnect at least partially overlap with each other as viewed in the plane, and the first interconnect has a first extension part extending from a position of an end of the first via toward the one end part of the first interconnect and having a length which is more than six times as long as a via width of the first via.

Multilayer interconnects with an extension part

A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film.

Semiconductor device and method of manufacturing the same

A blue light-emitting silicate phosphor favorably employable as a blue light-emitting source of a light-emitting apparatus which gives emission of a visible light upon irradiation of ultraviolet rays having a wavelength of 254 nm, such as ultraviolet rays emitted by a fluorescent lamp is produced by a method comprising calcining a powdery mixture comprising a magnesium oxide powder, an MeO source powder, a EuO source powder and a SiOsource powder, said magnesium oxide powder having a purity of 99.9 wt. % or higher and a BET specific surface area in the range of 3 to 60 m/g and having been prepared by bringing a metallic magnesium vapor into contact with oxygen whereby oxidizing the metallic magnesium vapor.

Silicate-based blue light-emitting phosphor and method for producing same

A blue light-emitting phosphor having an elemental formula of SrMgSiO:Eu(wherein x represents a value in the range of 0.008 to 0.110), a merwinite crystal structure and a crystal lattice strain of 0.080% or less as determined from an X-ray diffraction pattern at diffraction angle 2&#x3b8; of 20-130&#xb0; by the Le Bail method, wherein the X-ray diffraction pattern is determined using a CuK&#x3b1; ray having an incident angle of &#x3b8;, is used advantageously as a blue light-emitting material for a light-emitting device which comprises a semiconductor light-emitting element capable of emitting a light having a wavelength of 350-430 nm upon application of an electrical current, such as a white light-emitting LED lamp, and a blue light-emitting material capable of emitting a blue light upon excitation with a light emitted by the semiconductor light-emitting element.

Blue-light-emitting phosphor and light-emitting device equipped with the blue-light-emitting phosphor

The sudden generation of heat being frequently caused in the case of the overcharge of a lithium secondary cell which have a positive electrode comprising a composite metal oxide of lithium and cobalt or a composite metal oxide of lithium and nickel, a negative electrode comprising metallic lithium, a lithium alloy or a material capable of occluding and releasing lithium, and a nonaqueous electrolyte solution comprising a nonaqueous solvent and an electrolyte dissolved therein can be efficiently prevented by the addition, to the nonaqueous electrolyte solution, of an organic compound which, when the lithium secondary cell is overcharged, decomposes into a decomposition product capable of dissolving out the cobalt or nickel contained in the positive electrode and depositing it ion the negative electrode (for example, a tert-alkylbenzene derivative).

Lithium secondary battery and non-aqueous electrolytic solution

A high-density N-type diffusion layerformed in a separation areamakes it possible to reduce a collector current flowing through a parasitic NPN transistor. Thus, a normal CMOS process can be used to provide a driving circuit and a data line driver which make it possible to improve resistance to possible noise occurring between adjacent terminals, while controlling a chip size.

Method of manufacturing semiconductor device

A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask.

Method for fabricating semiconductor device

An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions.

Semiconductor device including interconnects, vias connecting the interconnects and greater thickness of the liner film adjacent the vias

A non-aqueous electrolytic solution favorably employable for a lithium secondary battery employs a non-aqueous electrolytic solution which comprises a non-aqueous solvent and an electrolyte which further contains 0.001 to 0.8 weight % of a biphenyl derivative having the formula: in which each of Yand Yrepresents hydroxyl, alkoxy, hydrocarbyl, hydrogen, acyloxy, alkoxycarbonyloxy, alkylsulfonyloxy, or halogen, and each of p and q is an integer of 1 to 3.

Non-aqueous electrolytic solution and lithium secondary battery

In a rechargeable non-aqueous electrolyte secondary battery using positive electrodes, negative electrodes and a non-aqueous electrolytic solution, additives to the electrolytic solution are used in combination, preferably in combination of at least two compounds selected from o-terphenyl, triphenylene, cyclohexylbenzene and biphenyl, and thus there are provided batteries excellent in safety and storage characteristics.

Electrolyte for non-aqueous cell and non-aqueous secondary cell

After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.

Growing community of inventors

Yamaguchi, Japan

Akira Ueki