Tokyo Ohka Kogyo Co., Ltd.

Tokyo Ohka Kogyo Kabushiki Kaisha

Tokyo Denshi Kagaku Co., Ltd.

Tokyo Denshi Kagaku Kabushiki Kaisha

Akira Uehara

Isamu Hijikata

Hisashi Nakane

Mitsuaki Minato

Muneo Nakayama

Hiroyoshi Sago

Hiroyuki Kiyota

Futoshi Shimai

Akira Hashimoto

Toshihiro Nishimura

Atsushi Matsushita

Shigemi Fujiyama

Shigekazu Miyazaki

Mitsuo Samezawa

Toshiyuki Ishida

Hideyuki Mizuki

Kazuto Obuchi

Shozo Toda

Yoshitsugu Kawamura

Eiichi Kashiwagi

Kazutoshi Fujisawa

Kazuhisa Takao

Satoshi Oya

Miyuki Saito

Takashi Uehara

A slit nozzle is positioned above a surface of a substrate placed in a rotary coater, and, while the slit nozzle is translated parallel to the surface of the substrate a coating solution is ejected from the slit nozzle toward the glass substrate under conditions such that the effects of surface tension of the solution are minimized or substantially cancelled out, to uniformly coat the coating solution on substantially the entire surface of the substrate with minimum wasting of the solution.

Method of coating solution on substrate surface using a slit nozzle

A slit nozzle is positioned above an end of a glass substrate placed in an inner cup, and, while a coating solution is being ejected with reduced surface tension from the slit nozzle toward the glass substrate, the slit nozzle is translated parallel to the surface of the glass substrate to roughly coat the coating solution on substantially the entire surface of the glass substrate. Thereafter, the upper opening of the inner cup and the upper opening of an outer cup around the inner cup are closed by respective lids, and then the inner cup is rotated to rotate the glass substrate for thereby spreading the coated solution uniformly over the surface of the glass substrate under centrifugal forces.

Method of applying a coating solution to a substrate surface using a rotary coater

A tubular reaction chamber is mounted on an annular insulating plate disposed on a grounded metallic base plate. A cylindrical outer electrode connected to a high-frequency power supply is disposed around said tubular reaction chamber, and a cylindrical inner electrode is disposed in said reaction chamber coaxially with said cylindrical outer electrode. The cylindrical inner electrode has a plurality of inlet holes defined therein, and a lower end disposed in an opening defined in the metallic base plate and fixed to said metallic base plate. A holder is disposed in said cylindrical inner electrode for supporting a plurality of wafers at spaced intervals.

Coaxial plasma processing apparatus

A plasma processing apparatus for etching, ashing, or otherwise processing silicon wafers has a pair of spaced reaction chambers each for processing a silicon wafers in a plasma, a pair of spaced cassette table mechanisms each for supporting a wafer cassette which houses a plurality of wafers therein, and a transfer robot disposed between the pair of spaced reaction chambers and the pair of spaced cassette table mechanisms, for transferring the wafers, one at a time, between the wafer cassette supported by one of the workpiece table mechanisms and one of the reaction chambers. Each of the cassette table mechanisms has a turntable for placing the wafer thereon, the turntable being rotatable to orient the wafer cassette out of physical interference with the robot arm of the transfer robot.

Plasma processing apparatus

An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

Object handling devices

A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.

An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.

Method of and apparatus for processing a workpiece in plasma

Object handling device

An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.

Electrode for use in the treatment of an object in a plasma

An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by CVD coating process.

A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.

Plasma reactor

A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

Method of forming silicone film

The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

Surface treatment of silicone-based coating films

A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.

Thin-film coating apparatus

An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.

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Kanagawa, Japan

Akira Uehara