Kabushiki Kaisha Toshiba

Fujitsu Corporation

Hitachi, Ltd.

Ishikawajima-harima Heavy Industries Co., Ltd.

Ishikawajima-harima Jukogyo Kabushiki Kaisha

The Tokyo Electric Power Company, Incorporated

Fujitsu Kasei Limited

Akira Tanaka

Hiroshi Yamada

Yasushi Hara

Makoto Abe

Toshikazu Takahashi

Chikara Nishio

Masashi Hirabayashi

Kenji Kawasaki

Tetsuo Tanaka

Yoshiaki Morimoto

Motoaki Satoyama

Toshiaki Kohno

Atsushi Murase

Masashi Watanabe

Hirokazu Aritake

Masaaki Onomura

Toshiyuki Terada

Hisao Kojima

Satoru Yasui

Masaya Hirashima

Hideo Shiozawa

Shunji Yoshitake

Naoki Shibukawa

Tetsushi Okamoto

Takashi Harakawa

Kenichi Yamazaki

Fumio Sawa

Shukuyo Yamada

Takayuki Matsumoto

Koichi Gen-ei

Tadayuki Hashidate

Masamitsu Sakuma

Takashi Sakuraya

Yoshio Yanagi

Yoshihiro Hyodo

Hiroaki Cho

Isao Shiozawa

Shingo Furukawa

Sadao Tezuka

Norio Kainuma

Yutaka Ohmura

Naoto Watanabe

Juhong Yang

Emi Sato

Masaya Hirano

A crimping determination device according to an embodiment includes a dropping unit, an image acquisition unit, and a control unit. The dropping unit drops a test solution to a wire harness. The wire harness includes a crimped portion in which an electric wire is crimped by a crimping terminal, a first electric wire portion in which the electric wire is exposed on a distal end side, and a second electric wire portion in which the electric wire is exposed on a proximal end side. The dropping unit drops the test solution to either one of the first electric wire portion and the second electric wire portion. The image acquisition unit acquires an image including the other one of the first electric wire portion and the second electric wire portion. The control unit determines a quality of a crimped state of the crimped portion based on the image.

Crimping determination device, crimping determination method, crimping determination program, wire harness processing device, and wire harness processing method

A resistance mapping device includes: a first chip including a first surface, a second surface positioned at a side opposite to the first surface, and a plurality of first electrodes provided at the first surface; a second chip including a third surface facing the first surface, a fourth surface positioned at a side opposite to the third surface, and a plurality of second electrodes provided at the third surface; and a measurement part, the measurement part being configured to measure a resistance of a portion of a measurement object, the portion of the measurement object being between the first electrode and the second electrode that correspond to each other among the plurality of first electrodes and the plurality of second electrodes, and acquire mapping data in which measured values of the resistances are associated with positions of the measurement object corresponding to the plurality of first electrodes.

Resistance mapping device, resistance measurement method, and recording medium

According to one embodiment, a printed wiring board includes a wiring board, a connector part, a connection pad provided between the wiring board and the connector part and connected with the connector part with a solder material and a guide groove provided in the wiring board to be continuous to the connection pad, to guide a portion of the solder material from the connection pad.

Printed wiring board

An erosion resistant material has a continuous portion and discontinuous portions. The continuous portion has a continuous structure. The discontinuous portions are arranged inside the continuous portion to have a discontinuous structure. The discontinuous portions are formed of particles having an average particle diameter of 1 &#x3bc;m or less. Further, the discontinuous portions are formed of a material having a surface hardness and a Young's modulus higher than those of the continuous portion.

Erosion resistant material and turbine blade

A light emitting device includes a first layer of a first conductivity type, a second layer of a second conductivity type, a light emitting layer between the first and second layers, a first electrode disposed on a surface of the first layer, and a second electrode disposed on a surface of the second layer and electrically insulated from the first layer. The first layer has first and second regions, each of which contacts the first electrode. A dopant concentration in the first region is less than a dopant concentration in the second region.

Nitride semiconductor light emitting device

A reflector has a curved part covering the light source and a pair of end parts extending at the two sides of the curved part. The inside surface of each end part has a plurality of substantially parallel projections or depressions. The light-guiding plate has an incident surface and an emission surface substantially perpendicular to the incident surface, the incident surface having a plurality of projections or depressions extending substantially parallel to the emission surface. Also, the reflection surface of the light-guiding plate has projections.

Light-guiding plate, lighting device and display device

Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5&#xd7;10cmto not more than 3&#xd7;10cm; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and having an impurity concentration of 1&#xd7;10cmor more and less than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.

Semiconductor light-emitting element and method of manufacturing the same

A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.

Nitride-based semiconductor laser device

A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.

Semiconductor laser and manufacturing method thereof

An electronic apparatus includes a liquid crystal display device. The liquid crystal display device comprises first and second light sources, a light guide plate, and a liquid crystal unit. The first light source is disposed on one of two opposing side surfaces of the light guide plate. The second light source is disposed on the other of the two opposing side surfaces of the light guide plate. A first plurality of substantially parallel grooves are formed in a first surface of the light guide plate which is substantially parallel with a display surface of the liquid crystal unit. A second plurality of substantially parallel grooves are formed in a second surface opposing the first surface of the light guide plate. At least one of a dimension and density of the first plurality of grooves substantially monotonically changes from one in the vicinity of one of the light sources to one in the vicinity of the other of the light sources.

Electronic apparatus, liquid crystal display device and light guide plate

A surface emitting semiconductor laser capable of improving high temperature properties is provided. In a surface emitting semiconductor laser, as well width of an active layer is set at from 4 nm to 6 nm and the number of wells thereof is set at one or two In addition, above and below the active layer, InGaAlP clad layers are formed, and in a stacking direction of the active layer, through the above and below clad layers each, further above and below thereof, light reflecting layers are formed.

Surface emitting semiconductor laser

This is a double wavelength semiconductor laser unit having a first laser emitting a light of a first wavelength and a second laser emitting a light of a second wavelength different from the first wavelength. The first and second lasers are merged on a substrate. The first laser has a bulk active layer whose film thickness is 0.01 &mgr;m or more and 0.1 &mgr;m or less. And the second laser has an MQW active layer constituted by stacked structure composed of a quantum well layer and a barrier layer. By employing the bulk active layer for the first laser, it is possible to reduce the band gap discontinuity induced at a boundary between a cladding layer and the bulk active layer, and then decreases an operational voltage, and further improve the reliability of the first laser.

Monolithic multi-wavelength semiconductor laser unit

Growing community of inventors

Yokohama, Japan

Akira Tanaka